38.5L: Late‐News Paper: PVD SiO₂ for Metal‐Oxide TFT Application

Abstract

IGZO TFTs are promising candidates to drive future high performance AM LCDs. Since IGZO is known to be sensitive to hydrogen new deposition processes for the adjacent dielectric thin films are needed. We developed a full-reactive hydrogen-free sputter process for SiO 2 which shows a performance comparable to the state-of-art CVD dielectrics. We demonstrated that our sputtered SiO 2 thin films are stable to electric fields of above 10 MV/cm and show leakage currents below 10 -8 A/cm 2 at 6 MV/cm.