IGZO deposition by rotary sputtering targets serves the needs for high-performance, low-manufacturing-cost TFTs. Both, manufacturability of rotary targets and performance of produced TFTs confirm the feasibility and underline the advantages of using rotary technology. INTRODUCTIONIt has been demonstrated that IGZO TFT backplanes can be used for advanced displays by several display manufacturers 1-3 , although many challenges are still to overcome for large scale production. One of the challenges is to make large area displays repeatedly with good TFT performance and low cost. Because of its success for deposition of high quality transparent conductive oxide layers and metallization layers on larger substrates (2500x2200mm), rotary target sputtering technology has been considered as the solution to address the challenge. In this paper, results of a systematic study, including target manufacturing, film deposition, TFT performance testing under normal and stressed conditions, are presented to demonstrate the feasibility.

IGZO TFTs are promising candidates to drive future high performance AM LCDs. Since IGZO is known to be sensitive to hydrogen new deposition processes for the adjacent dielectric thin films are needed. We developed a full-reactive hydrogen-free sputter process for SiO 2 which shows a performance comparable to the state-of-art CVD dielectrics. We demonstrated that our sputtered SiO 2 thin films are stable to electric fields of above 10 MV/cm and show leakage currents below 10 -8 A/cm 2 at 6 MV/cm.