Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed.

The means of enhancing the growth of seedlings of Japanese persimmon (Diospyros kaki Thunb.) through inoculations of arbuscular mycorrhizal (AM) fungi [ Gigaspora margarita (GM) , Glomus aggregatum (ga), Glomus fasciculatum (gf), Glomus mosseae (gm) and Glomus sp. R-10 (gr) ] were investigated. Fifteen weeks after inoculation, plant height showed significantly higher values in AM fungus-inoculated plants (except gm) than in noninoculated ones; the effect was more pronounced in GM-, ga-and gr-inoculated plants than in gf-inoculated ones. The number of leaves and leaf area were superior in AM fungus-inoculated plants compared with noninoculated ones. The shoots of GM-, ga-and gr-inoculated plants had greater dry weight than did those in noninoculated ones, while for the dry weight of roots, GM-, gf-and gm-inoculated plants gave significantly greater values than did noninoculated ones. Although AM fungus infection occurred in all the seedlings inoculated, GM, gf and ga showed higher infection levels than gr and gm. The increase in P concentrations was confirmed in both tap and lateral roots of almost all infected plants. Consequently, it was clarified that both AM fungus infection level and plant growth enhancement through symbiosis differed with AM fungus species in Japanese persimmon seedlings.

IGZO deposition by rotary sputtering targets serves the needs for high-performance, low-manufacturing-cost TFTs. Both, manufacturability of rotary targets and performance of produced TFTs confirm the feasibility and underline the advantages of using rotary technology. INTRODUCTIONIt has been demonstrated that IGZO TFT backplanes can be used for advanced displays by several display manufacturers 1-3 , although many challenges are still to overcome for large scale production. One of the challenges is to make large area displays repeatedly with good TFT performance and low cost. Because of its success for deposition of high quality transparent conductive oxide layers and metallization layers on larger substrates (2500x2200mm), rotary target sputtering technology has been considered as the solution to address the challenge. In this paper, results of a systematic study, including target manufacturing, film deposition, TFT performance testing under normal and stressed conditions, are presented to demonstrate the feasibility.

We have developed 192 outputs PDP address driver IC, uPD16347 with the over temperature detection circuit. This IC uses bonded SOI wafer and trench process for dielectric isolation. This IC has the 0.5μm design rule CMOS logic circuit and 80V high withstand voltage CMOS output circuit. Also, this IC uses the TCP that is expected to become the mainstream of package technology for future PDP address driver IC. However, it is difficult to use TCP for PDP address driver IC because of large power dissipation to drive PDP. Therefore we have developed the over temperature detection circuit for this product. By using this function it becomes possible to detect the over temperature condition of the driver IC.