3D 65nm CMOS with 320°C microwave dopant activation

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

“…It has been shown that under this treatment GeO volatilization and Ge 2+ defects are suppressed [84], indicating also that the two defects may be related, i.e., one may be the precursor of the other. High pressure oxidation followed by low temperature oxygen annealing results in good quality GeO 2 [90,91]. The same is true for GeO 2 obtained by thermal oxidation at 450 • C [78,79] combined with an Al 2 O 3 highk cap [78,92] and by ozone oxidation [79,92], yielding a low density of states D it ∼ 1 × 10 11 cm −2 V −1 (or below) and some of the best Ge p-and n-MOSFETs.…”

“…It was realized that it is essential to minimize or eliminate the defects in order to improve the quality of MOS devices. One way to do this is by high pressure oxidation using > 40 Atm of O 2 [84,90,91]. It has been shown that under this treatment GeO volatilization and Ge 2+ defects are suppressed [84], indicating also that the two defects may be related, i.e., one may be the precursor of the other.…”

“…Nevertheless, rareearth and other trivalent element oxides like Y 2 O 3 can be combined with GeO 2 to obtain improved properties of the gate stacks. It has been suggested [109] that the formation of YGeO x between GeO 2 and Y 2 O 3 suppresses the volatilization of GeO and speculated [91] that possible diffusion of Y atoms in GeO 2 improves the quality of GeO 2 resulting in the so called "valency passivation" according to which trivalent Y atoms substitute tetravalent Ge atoms with one unsaturated bond at defect sites. A GeO 2 interface layer with few Y atoms combined with a Y 2 O 3 cap has given the best mobility results in Ge n-MOSFET devices [91].…”

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

“…Microwave annealing increases the molecular rotational and polarization energies of dopants for activation [6], [7]. Microwave annealing is performed at low temperature, which suppresses the diffusion of dopants.…”

Microwave annealing effect on the resistivity of doped hydrogenated amorphous silicon on glass

“…Microwave heating has the potential to benefit growing high-quality polycrystalline silicon via amorphous silicon (a-Si) thin films with low annealing temperature and short processing time for the application of thin-film transistors and solar cells [1][2][3][4][5][6]. The study of microwave heating for the crystallization of a-Si thin film has therefore become very intensive recently.…”