3D inductors with nanowire through substrate vias

Abstract

International audienceThis paper presents a novel 3D inductor (solenoid) fabricated on a 50-pm thick AAO membrane using nanowire-vias. Several inductors were fabricated in this simple and low-cost technology with nanowires. They were measured up to 110 GHz and compared to the state-of-the-art results presented in the literature in different technologies: CMOS, glass, LCP and MEMS. The simulations are in good agreement with measurement, predicting the great potential of these inductors. The first 3D inductors using nanowire-vias presented inductances from 0.5 nH to 1.7 nH with small areas that range from 0.03 mm2 to 0.08 mm2

Integrated Antennas on MnM Interposer for the 60 GHz Band

“…Several very promising results were obtained with the MnM interposer that allows the design of transmission lines with high and low characteristic impedances (from 10 Ω to 140 Ω) [8], Through Substrate Vias (TSVs) [9], 3D inductors [10], Substrate Integrated Waveguides (SIW) [11,12], among others. Fig.…”

Porous Anodic Aluminum Oxide Interposer: Fabrication, Characterization, and Evaluation

“…This is mainly because of higher conductive loss from Cu. Comparing the end results in this paper to the work using Cu nanowire bundles as through AAO vias 18 : 2-turn solenoid inductor in this work is about 0.4 nH higher with significant better peak Q value, 41 to 16. In 5-turn case, inductance is 1 nH higher with better Q, 18 to 8.…”

“…In 5-turn case, inductance is 1 nH higher with better Q, 18 to 8. However, the referenced work 18 had thinner AAO film (50 μm) which could impact the energy storage in the structure, therefore, fabrication process might have to perform on the same thickness of AAO for more reasonable comparison. Table III.…”

“…Researches have been published [16][17][18][19][20][21] previously to fabricate and characterize porous anodic aluminum oxide (AAO) interposer using the same concept of growing metallic nanowires in AAO as interconnects. Previously, however, fabrication works has been done to create through AAO interconnects taking advantage of the anisotropic structural and etch properties 22 of vertically self-aligned nanopores.…”

Millimeter-wave Wireless Integrated Systems: what to expect for future solutions

“…3D structures were further designed due to the availability of high-performance small nanowire-vias in this interposer, such as crossovers up to 110 GHz [24] with maximum insertion loss of 1.5 dB (not de-embedded), imbalance of 0.2 dB, phase imbalance of 3.3°, and isolation of 30 dB (Fig. 4); 3D inductors [25] with SFR of 91 GHz, quality factor of 35 @40 GHz and values up to 17 nH and 3D transformers [26] (Fig. 5) with different impedance ratios and even structures based on substrate integrated waveguide technology which presented state-of-the-art results.…”