3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Saied, Mazen; Foussadier, Franck; Belledent, Jerome; Trouiller, Yorick; Schanen, Isabelle; Yesilada, Emek; Gardin, Christian; Urbani, Jean-Christophe; Sundermann, Frank; Robert, Frédéric; Couderc, Christophe; Vautrin, Florent; LeCam, Laurent; Kerrien, G.; Planchot, Jonathan; Martinelli, C.; Wilkinson, Barry; Rody, Yves; Borjon, Amandine; Morgana, Nicolo; Di-Maria, J. L.; Farys, V.

doi:10.1117/12.752613

Cited by 8 publications

(3 citation statements)

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“…It is clear that there is an appreciable change in F θ value at angles of incidence and observation larger than ± 10 o from normal incidence. To describe the image field variation with angle of incidence, Debye's integral [10] has to be evaluated using the diffracted far field, described by equation (7). In order to find analytical solution for Debye's integral, the function F θ has to be simplified.…”

Section: Evaluating Diffracted Image Fieldmentioning

confidence: 99%

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Modeling mask scattered field at oblique incidence

2009

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In optical lithography light diffracted from the mask has been customary assumed to have constant amplitude with the angle of incidence of the light illuminating the mask. This approximation, known as constant scattering coefficient approximation, has been successfully used at small NA. As the NA increases to unity and beyond, to cope with the continuous demand for shrinking integrated circuits device dimensions and densities, the validity of this approximation becomes questionable. In this paper, we study diffracted field variation with the angle of incidence using physical theory of diffraction. An asymptotic theory like the physical theory of diffraction allows us to better understand, quantify, and model using analytical formulae, induced effects of light diffraction from mask at oblique incidence. This paper presents a semi analytical model that describes diffracted field variation with angle of incidence. The model accuracy is validated by comparison with rigorous field simulations using Panoramic software.

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Section: Evaluating Diffracted Image Fieldmentioning

confidence: 99%

“…As NA increases to unity and beyond, the validity of this approximation is becoming questionable. It was shown in previous work that the validity of CSC breaks down as NA increases [6,7]. Hence, it is crucial to account for oblique incidence, when modeling diffraction, to keep model accuracy within accepted limits.…”

Section: Introductionmentioning

confidence: 97%

Modeling mask scattered field at oblique incidence

2009

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“…Three-dimensional (3D) simulation is necessary for accurate modeling in such critical problems, e.g., 3D defects, 3D mask repair and optical proximity effects. However, the major disadvantage of 3D rigorous vector simulation is the huge increased computation time and memory requirements over 3D scalar models and 2D vector models [4,5]. Based on this, and taking the OPC model into account, computation load is much heavier.…”

Section: Introductionmentioning

confidence: 99%

Vector Hopkins Model Research Based on Off-Axis Illumination in Nanoscale Lithography

Cao¹,

Cheng²,

Zhang

2009

PIER

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Abstract-Based on vector electromagnetic theory and the Waveguide Model, the vector Hopkins model is deduced. The model contains the vector Hopkins formula and the resist profile model of fast Optical Proximity Correction. The vector Hopkins formula considers incidence angles and azimuth angles of off-axis illumination, which differs from the traditional scalar Hopkins formula. The resist profile model is employed to analyze the effect of the photoresist diffusion under off-axis illumination by using self-adaptive Gaussian filter with scale adjustable, and a new transmission cross coefficient is obtained. The projection system parameters are introduced simultaneously, such as incidence angles, azimuth angles of off-axis illumination and diffusion parameters of photoresist. By simulating the aerial image of 3D mask in the actual lithography process, the optimal angular range of oblique incidence is studied; the image quality by impact with the oblique incidence angle is discussed as well.

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