Application of the hybrid Hopkins–Abbe method in full-chip OPC

Adam, Kostas; Lam, Michael; Cobb, Nick; Toublan, Olivier

doi:10.1016/j.mee.2008.11.100

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…Although able to improve the MTF accuracy, these thick mask solutions are generally time-consuming for image simulations because each solution incurs a high computational cost, is good for only one incident angle, and has to be repeated many times for different incident angles of a spatially extended source. Adam et al [17] presented a hybrid Hopkins-Abbe (HHA) method that divides a source into sectors and associates each sector with a constant MTF. However, such a stepwise zeroth-order approximation lacks sufficient accuracy and it is tricky to sectorize a given practical source in a systematic and optimal fashion.…”

Section: Introductionmentioning

confidence: 99%

Efficient representation of mask transmittance functions for vectorial lithography simulations

et al. 2014

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In this paper, a generalized method to efficiently represent the incident-angle-dependent mask transmittance function (MTF) of a thick mask is proposed. This method expands the MTF into a series expansion, which consists of a set of predetermined basis functions weighted by a set of predetermined expansion coefficients. The predetermined basis functions are independent of the incident angles and thus may be computed offline and stored, while the expansion coefficients depend only on the incident angles and can be rapidly calculated online. Near-field and optical image simulations of thick masks have demonstrated the excellent accuracy and superior speed performance.

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Section: Introductionmentioning

confidence: 99%

Efficient representation of mask transmittance functions for vectorial lithography simulations

et al. 2014

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Optical and EUV projection lithography: A computational view

Erdmann¹,

Fühner²,

Evanschitzky³

et al. 2015

Microelectronic Engineering

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Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography

Erdmann

Shao

Agudelo

et al. 2011

Journal of Modern Optics

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Lithographic masks are an important and increasingly complex part of systems for advanced optical and extreme ultraviolet (EUV) lithography. They introduce polarization and phase effects with a significant impact on the entire system performance. Rigorous electromagnetic field (EMF) modeling of the mask is indispensable for a predictive simulation of lithographic processes. This paper describes several alternative mask models and their integration into a lithography simulation framework. Several examples demonstrate the relevance of an accurate mask diffraction modeling for the prediction of the lithographic process performance

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Application of the hybrid Hopkins–Abbe method in full-chip OPC

Cited by 5 publications

References 9 publications

Efficient representation of mask transmittance functions for vectorial lithography simulations

Efficient representation of mask transmittance functions for vectorial lithography simulations

Optical and EUV projection lithography: A computational view

Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography

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