3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs

David, John K.; Register, Leonard F.; Banerjee, Sanjay K.

doi:10.1016/j.sse.2010.12.013

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…Specifically, we provide a valley-by-valley treatment of the space-, orientation-, and time-dependent QCPs based on the solutions of 2D effective mass Schrödinger's equations solved in each transport slice. [32][33][34][35][36][37][38][39][40][41] The valley and orientation dependence is provided by including the reciprocal effective mass tensor in the model Hamiltonian. [35][36][37][38][39] This point is necessary to capture the self-consistent modification of intervalley separations and degeneracy splitting of otherwise equivalent valleys.…”

Section: Quantum-corrections For Electron Quantum Confinementmentioning

confidence: 99%

“…[32][33][34][35][36][37][38][39][40][41] The valley and orientation dependence is provided by including the reciprocal effective mass tensor in the model Hamiltonian. [35][36][37][38][39] This point is necessary to capture the self-consistent modification of intervalley separations and degeneracy splitting of otherwise equivalent valleys.…”

Section: Quantum-corrections For Electron Quantum Confinementmentioning

confidence: 99%

“…Here, we calculate the set of QCPs based on the solutions of effective mass Schrödinger's equations defined in each channel slice normal to the transport direction [32][33][34][35][36][37][38][39][40][41] on a valleyby-valley basis [35][36][37][38][39] considering 2D confinement, [38][39][40][41] a first-principles strategy requiring no adjustable parameters. However, it is our uses of the QCPs, not their method of calculation, which is the focus here.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Crum¹,

Valsaraj²,

David³

et al. 2016

Preprint

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Section: Quantum-corrections For Electron Quantum Confinementmentioning

confidence: 99%

Section: Quantum-corrections For Electron Quantum Confinementmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Crum¹,

Valsaraj²,

David³

et al. 2016

Preprint

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Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations

Crum

Valsaraj

David

et al. 2016

Journal of Applied Physics

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Particle-based ensemble semi-classical Monte Carlo (MC) methods employ quantum corrections (QCs) to address quantum confinement and degenerate carrier populations to model tomorrow's ultra-scaled metal-oxide-semiconductor-field-effect-transistors. Here, we present the most complete treatment of quantum confinement and carrier degeneracy effects in a three-dimensional (3D) MC device simulator to date, and illustrate their significance through simulation of n-channel Si and III-V FinFETs. Original contributions include our treatment of far-from-equilibrium degenerate statistics and QC-based modeling of surface-roughness scattering, as well as considering quantum-confined phonon and ionized-impurity scattering in 3D. Typical MC simulations approximate degenerate carrier populations as Fermi distributions to model the Pauli-blocking (PB) of scattering to occupied final states. To allow for increasingly far-from-equilibrium non-Fermi carrier distributions in ultra-scaled and III-V devices, we instead generate the final-state occupation probabilities used for PB by sampling the local carrier populations as function of energy and energy valley. This process is aided by the use of fractional carriers or sub-carriers, which minimizes classical carrier-carrier scattering intrinsically incompatible with degenerate statistics. Quantum-confinement effects are addressed through quantum-correction potentials (QCPs) generated from coupled Schrödinger-Poisson solvers, as commonly done. However, we use these valley- and orientation-dependent QCPs not just to redistribute carriers in real space, or even among energy valleys, but also to calculate confinement-dependent phonon, ionized-impurity, and surface-roughness scattering rates. FinFET simulations are used to illustrate the contributions of each of these QCs. Collectively, these quantum effects can substantially reduce and even eliminate otherwise expected benefits of considered In0.53Ga0.47As FinFETs over otherwise identical Si FinFETs despite higher thermal velocities in In0.53Ga0.47As. It also may be possible to extend these basic uses of QCPs, however calculated, to still more computationally efficient drift-diffusion and hydrodynamic simulations, and the basic concepts even to compact device modeling.

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Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis

Popescu¹,

Popescu²,

Saraniti

et al. 2015

IEEE Trans. Electron Devices

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In this paper, we have investigated the electron transport and frequency response of the state-of-the-art single-InAs nanowire (NW) FETs using a full-band Monte Carlo simulator. InAs transistors using a single NW as the channel reveal excellent properties such as high current densities, high transconductance, and superior mobility when compared with silicon devices. One aspect that has been neglected until now is the high-frequency (HF) response of such devices. We perform a detailed HF analysis, calibrating our simulations with the experimental measurements that are successfully reproduced. We are able to make predictions about the electron distribution inside the NW transistor, and via a small signal analysis, we determine the intrinsic cutoff frequency and maximum frequency of oscillation. We compare these with the extrinsic measured figures of merit and observe a large discrepancy, which we are able to attribute to the parasitic elements. We finally perform a large signal analysis and investigate the nonlinearity of the device and the power transfer to the harmonics.

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3D-Monte Carlo study of short channel tri-gate nanowire MOSFETs

Cited by 3 publications

References 3 publications

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Ensemble Monte Carlo for III-V and Si n-channel FinFETs considering non-equilibrium degenerate statistics and quantum-confined scattering

Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations

Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis

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