3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range

All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes

“…The differences between on-state resistance values are probably connected with the slightly higher resistivity of the AZO layers on β-Ga 2 O 3 than resistivity of the ITO layers on β-Ga 2 O 3 , as the resistivity of ITO drops after annealing at high temperatures in an oxygen-containing atmosphere. [9,15] The on-off (for À10 V off-state voltage and þ4 V on-state voltage) current ratios were 2Â10 10 and 1Â10 11 for the AZO and ITO Schottky contacts, respectively. The leakage current at reverse bias was compared with the thermionic field emission (TFE) model taking into account the tunneling process at metal/semiconductor interface…”

“…Average Schottky barrier heights and ideality factors are 0.99 and 1.05 eV and 0.95 and 1.03 eV for AZO and ITO Schottky contacts, respectively. The on-off current ratio is about 2Â10 10 and 1Â10 10 for AZO and ITO Schottky contact, respectively. Moreover, the on-state resistance is about 6-7 and 4-5 mΩ cm 2 for AZO and ITO Schottky contact, respectively, and is 20-35 times lower than for previously reported transparent β-Ga 2 O 3 Schottky diodes.…”

“…Another promising application is also 3D stacking of transparent gallium oxide UV-photodetectors on the top VIS-photodetectors to improve the multispectral detection capabilities of various sensors. [10,11] Fully transparent Schottky diodes on β-Ga 2 O 3 were reported recently with transparent indium tin oxide (ITO) ohmic contacts and with ITO [9] or InZnSnO (IZTO) [12] a transparent Schottky contacts. Due to the sustainability of indium and the high cost of its mining, alternative materials have been viewed as potential candidates to replace, at least partially, In-containing compounds.…”

Modeling, Simulation and Characterization of Aluminum Implantation in 4H-SiC for Large-Area Photodiode Technology

“…Previously a similar technology with small devices with epitaxial [18] and implanted [19,20] junction was applied. The small implantation junctions of 4H-SiC were used to build a dual-band photodetector [21,22]. For sensing applications the term "large area" is defined to be larger than 1 mm 2 [23].…”