3D simulations of device performance for 3D-Trench electrode detector

Chen, Jianwei; Ding, Hao; Li, Zheng; Yan, Shaoan

doi:10.1016/j.nima.2015.04.023

Cited by 19 publications

(14 citation statements)

References 14 publications

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“…This is the shortcoming of this type of 3D detector. We are working on a new structure to solve this problem [2][3][4][5]. Also, we investigated the possible breakdown situation in this type of detectors, and found that at the minimum voltages to reach carrier drift velocity saturation, the highest electric field in the detector is much below the value of the Si intrinsic breakdown field.…”

Section: Discussionmentioning

confidence: 99%

“…As we calculated above, we can therefore get a minimum carrier drift time of about 50 ps in these regions of the detector at a bias voltage of ~V~t 4 V for L P = 5 μm. As shown in Figure. 6, when the bias voltage goes to -6 volts, the electric field reaches 2x10 4 V/cm in regions between p + and n + electrodes of the detector, which will further guarantee the carrier saturation drift velocity condition. Shown in Figure. 7-8 are simulated electric field profiles at two different bias voltages for a detector with electrode spacing of 10 μm (L P = 10 μm).…”

Section: Detector Electrical Characteristicsmentioning

confidence: 95%

“…H H (4) Here N D is the detector bulk doping concentration. The doping of the silicon bulk is 1x10 12 cm -3 .…”

Section: Detector Electrical Characteristicsmentioning

confidence: 99%

“…Parker and his colleagues proposed a structure of solid-state radiation detectors using a 3D array of electrodes that penetrate into the detector's bulk [1]. In recent years, researchers of 3D detectors have mainly focused their efforts on improving detector radiation hardness by proposing various 3D structures as tracking detectors for the high luminosity upgrade of the Large Hadron Collider (HL-LHC) [2][3][4][5][6][7][8]. Examples of them are 1) In 2008, a non-fully penetrating, dual-column structure was proposed [6], with an electrode spacing of 50μm; and 2) a double-side, dual column structure [7].…”

Section: Introductionmentioning

confidence: 99%

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3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

Liu

Feng

2017

MATEC Web Conf.

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Abstract. 3D detectors with very small electrode spacing can provide ultra-fast detection due to their extremely small charge collection time. Since the detector full depletion voltage and charge collection time are independent to the detector thickness, ultra-fast 3D detectors can be made relatively thick (or not too thin, a200 μm) to ensure a large signal. The results of the 3D simulations and modeling of 3D silicon detectors with very small electrode spacing and relatively large thickness will be shown in this paper. The column spacing LP is in the range of 5 μm to 10 μm. At a bias voltage of only a few volts, the electric field in the detector can be large enough to ensure the carrier saturation drift velocity in most volume of the detector, and the detector charge collection time there can be as short as 10's of ps. In this paper, we will analysis the simulated electrical characteristics of this detector structure through systematic 3D simulations using the Silvaco's TCAD tool. Profiles of detector electric potential and electric field will be presented. We will investigate the region of low electric field (the "slow region") in the detector. We will also exam whether the detector reach the breakdown condition at operation voltages suggested in this work.

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Section: Discussionmentioning

confidence: 99%

Section: Detector Electrical Characteristicsmentioning

confidence: 95%

“…H H (4) Here N D is the detector bulk doping concentration. The doping of the silicon bulk is 1x10 12 cm -3 .…”

Section: Detector Electrical Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

Liu

Feng

2017

MATEC Web Conf.

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“…In 2010, Zheng Li proposed a new structure with a column electrode enclosed by a trench electrode (3D-Trench Electrode Detectors), which eliminates the electric potential saddle point existed in the all column electrode detectors, and has a better electrical field distribution [9]. Later, more works focused on the radiation hard characteristics of the new structure have been performed [10][11][12][13]. From these works, we can get the conclusion that this kind of structures are radiation hard and can be used in harsh radiation environment such as HL-LHC.…”

Section: Introductionmentioning

confidence: 99%

Development of Ultra-fast 3D Silicon Detectors: 3D Simulation and Modeling of 3D-trench Electrode Detector

Liu¹,

Li²

2017

Proceedings of the 3rd Annual International Conference on Advanced Material Engineering (AME 2017)

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Abstract.A square 3D-trench electrode detector structure based on the fast readout electronics is simulated in this paper using TCAD tools. Due to the small size of this structure, the detector is intrinsically rad-hard and it's response time can be as fast as 10's of ps. Electric characteristics including electric potential and electric field have been simulated. From those characteristics, we focus on studying the improvement of the detector compared to all column electrode ultra-fast 3D silicon detector in electric potential and electric field distributions, etc. For example, the ''slow region" in the center of all column electrode detector will not appear in our new detector structure. Furthermore, we take the breakdown consideration of the 3D-trench electrode detector on this paper. IntroductionWith the relatively fast readout electronics was available in real use [1], the silicon radiation detector with particularly fast velocity and response time had been introduced. For instance, fast silicon detectors have been used in the pioneering UA2 experiment at CERN, with the width of the shaped signal is 2 μs at half amplitude and 4 μs at the base [2]. The detector array used at colliders which have short inter-collision times will require a further increase in speed. A current amplifier with a rise-time of 4 ns and a pulse width at the base of 30 ns was developed to read out fast planar detectors [3]. A silicon detector system allowing higher speeds in timing using were developed. Silicon detectors with 3D n+ and p+ doped column electrodes that penetrate through the silicon bulk [4-5] have been developed, in which charge from long tracks to be collected in a rapid, smooth high current burst, as shown in Figure 1. Also, fabrication technology of making 3D silicon detectors with increased speed, sub-nanosecond time resolution fast current amplifiers, and constant-fraction comparators or fast wave-form recorders have been studied [6]. Developments in integrated circuit technology fabrication permit the design and fabrication of even higher speed current amplifiers [7][8]. Column electrodes are usually formed by etching holes with a diameter in the order of 10 m and diffusing dopant gasses into the surrounding single-crystal silicon.

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3D simulations and modeling of new low capacitance silicon pixel detectors

Xiong

Zheng

2016

Nuclear Instruments and Methods in Physics Research Section A:

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3D simulations of device performance for 3D-Trench electrode detector

Cited by 19 publications

References 14 publications

3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

Development of Ultra-fast 3D Silicon Detectors: 3D Simulation and Modeling of 3D-trench Electrode Detector

3D simulations and modeling of new low capacitance silicon pixel detectors

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