4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

Stanley, C.R.; Holland, M.; Kean, A.H.; Chamberlain, J.M.; Grimes, R.T.; Stanaway, M.B.

doi:10.1016/0022-0248(91)90939-3

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High Mobility Gaλs1

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1994

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Cited by 26 publications

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“…The use of As2 has also resulted in improved mobility in unintentionally doped films, which are usually n-type using the dimer, resulting in peak mobilities greater than 4.5 x 10 5 cm2 V-1 s-1 [4].…”

Section: High Mobility Gaλsmentioning

confidence: 99%

State of the Art Molecular Beam Epitaxy of III-V Compounds

Foxon

1995

Acta Phys. Pol. A

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This paper discusses molecular beam epitaxy with particular emphasis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.

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Section: High Mobility Gaλsmentioning

confidence: 99%