4 Gingivitis

Velden, U. van der

doi:10.1007/978-90-313-6887-7_4

Cited by 3 publications

(3 citation statements)

References 40 publications

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“…Fixed abrasive process is superior to free abrasive process with regard to planarization that the rate of planarization is almost three times faster than free abrasive process. This enables further process optimization, and both with-in-die non-uniformity and with-in-wafer non-uniformity are better [5]. A fixed abrasive solution for one-stop machining of φ300 mm Si wafer was proposed to replace the free abrasive method and achieve the result of a surface roughness of Ra < 1 nm and a global flatness of less than 0.2µm [6].…”

Section: Introductionmentioning

confidence: 99%

Free and Fixed Abrasive Lapping of BK7 Glass

Tang

Zhu

et al. 2016

KEM

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Fixed abrasive technology which has many advantages is one of the future machining directions. Free and fixed abrasive lapping of BK7 glass was investigated and different material removal modes and surface damage categories by lapping were discussed. The results show that material removal rate is larger for free abrasive lapping than that of fixed abrasive lapping with four abrasive sizes and decreases with diamond size decreasing in two lapping processes. Surface quality is better for fixed abrasive lapping than that of free abrasive lapping at the same diamond size and gets better with the decreasing of diamond size. Fixed abrasive lapping can achieve simultaneously high MRR and good surface quality.

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Section: Introductionmentioning

confidence: 99%

Free and Fixed Abrasive Lapping of BK7 Glass

Tang

Zhu

et al. 2016

KEM

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“…The slurry sputtered and most abrasives are wasted. And the non-uniform material removal and overpolishing are formed because of the stochastic distribution of abrasives [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Fixed Abrasive Lapping and Polishing of Hard Brittle Materials

Zhu

Zuo

et al. 2010

KEM

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Fixed abrasive lapping and polishing (FALP) is a new machining technology and was adopted to manufacture hard brittle materials and obtain the high productivity because of fixed abrasive. The preparation process of fixed abrasive pad (FAP) was described. FALP of K9 glass, mobile panel glass and Si were investigated with fixed 5-10 µm diamond abrasives. The effect on material removal rate (MRR) and surface quality of different materials was studied. The results show that in the same FALP process conditions, Si is the highest MRR and reaches 4428 nm/min, mobile panel glass is inferior to and K9 glass is the lowest. And surface quality of mobile panel glass that surface roughness Sa is 2.10 nm and little and less damages is the best, Si is followed and K9 glass is the worst. So FALP can obtain the higher MRR and reaches several micrometers per minute and the better quality that surface roughness Sa can reach nanometer level for different materials.

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“…11,12 With abrasive particles embedded in microreplicated resin patterns on top of pad, the slurry-free CMP process with fixed-abrasive pads simplifies the 3-body pad/abrasive/wafer contact down to only 2-body pad/wafer contact with demonstrated superior planarization efficiency and improved WID uniformity over conventional pad/slurry processes. However, advances in slurry formulation has kept up and can deliver similar or better selectivity.…”

mentioning

confidence: 99%

A Microreplicated Pad for Tungsten Chemical-Mechanical Planarization

Tseng

Mohan

Hull

et al. 2016

ECS J. Solid State Sci. Technol.

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A microreplicated (MR) pad with regulated long-range order surface pore-asperity patterns is used for the buff polish step in a 3-platen W-CMP process for 14 nm replacement metal gate (RMG) and trench salicide (TS) planarization. This new pad requires no diamond tip conditioner and can last up to 2000 wafer passes with highly repeatable removal rates, while maintaining low and consistent defects and within-wafer uniformity. The MR pad also provides unique benefits of mitigating within-die non-uniformity as demonstrated by gate electrical conductance tests and confirmed by physical thickness measurement through cross-sectional TEM. In addition, topography-driven defects are reduced significantly. The mechanisms responsible for the unique performance of MR pads will be elucidated and the significance of this new CMP pad technology will be discussed. Chemical-mechanical planarization (CMP) has become a pivotal manufacturing process for new integration schemes of semiconductor devices ever since its invention in the 1980s. From the implementation of Cu interconnects early on to the realization of field-effect transistors (FinFET) for 22 nm technology and beyond, CMP is the process that enables leading-edge device performance. With shrinking feature size for advanced technology nodes, however, the planarity requirements for CMP are tightened down to the order of several nanometers across the entire 300 mm wafer. Meanwhile, the tolerance for non-uniformity reduces to only a few percent within-die, within-wafer, and wafer-towafer for 14 nm technology nodes and above. As a consequence, advances in CMP equipment and consumables are urgently need in order to meet such stringent planarity and uniformity criteria.Conventional approaches to within-wafer CMP planarity and uniformity control such as the optimization of polish pressure, platen/carrier rotation, slurry flow, pad conditioning, slurry components, and so forth have become the standard practice at the end-user level. Coupled with advances in equipment technologies, the above approaches provide wafer to sub-wafer level thickness and planarity correction. When combined with metrology-based advanced process control (APC), they can help reduce wafer-to-wafer variation as well. Recent progress in RIE technology also enables across-wafer thickness correction die by die and assists CMP to achieve nano-scale within-wafer uniformity.1,2 However, there is still a lack of effective method to mitigate one of the longest lasting major challenges of CMP, the pattern dependency, 3-5 which would give rise to within-die nonuniformity (WIDNU). As illustrated in Fig. 1, pattern dependency arises when the initial difference in pattern density among various structures creates a global step height variation, due to the difference in removal rates before the local patterns are planarized. In the case of tungsten replacement metal gate (W-RMG) CMP, such within-die gate height variation will translate to drift in gate resistance and threshold voltage across different devices, compromising t...

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4 Gingivitis

Cited by 3 publications

References 40 publications

Free and Fixed Abrasive Lapping of BK7 Glass

Free and Fixed Abrasive Lapping of BK7 Glass

Fixed Abrasive Lapping and Polishing of Hard Brittle Materials

A Microreplicated Pad for Tungsten Chemical-Mechanical Planarization

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