40 Gb/s postamplifier and PIN/preamplifier modules for next generation optical front-end systems

Dutta, Achyut K.; Takechi, Masaru; Virk, R.S.; Kobayashi, Mariko; Araki, Keiichi; Sato, Keiji; Gentrup, M.; Ragle, R.

doi:10.1109/jlt.2002.807546

Cited by 12 publications

(11 citation statements)

References 20 publications

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“…At this electric field, the velocity of electrons and holes are 9.5×10 6 and 6×10 6 respectively. The time it takes all the photo-generated carriers in the intrinsic layer to reach the highly doped layers is around 10.5 psec and 16.7 psec for electrons and holes respectively.…”

Section: Designmentioning

confidence: 97%

“…Any pin type photodetector based on Ge will have significant amount of absortion in either p+ or n+ layer, which will lower the responsivity and the speed of the photodetector. InGaAs based detector on InP substrate is used for detecting the light with wavelength range from 0.9 to 1.7 µm which is widely used in the optical communication [2]- [6]. Photodiodes especially of InGaAs pin type have been studied extensively over the last decade for its application in optical communication.…”

Section: Introductionmentioning

confidence: 99%

“…Photodiodes especially of InGaAs pin type have been studied extensively over the last decade for its application in optical communication. Now a day, the photodetector speed as high as 40 Gb/s [6], and quantum efficiency close to 100% [5] are available for optical communication.…”

Section: Introductionmentioning

confidence: 99%

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High speed pin photodetector with ultra-wide spectral responses

et al. 2005

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We report the design and fabrication of a high speed surface illuminated pin photodetector with a wide spectral response. An InGaAs based detector was grown lattice matched to InP and the device was fabricated using a novel technique to facilitate the direct absorption of incoming photons in the InGaAs layer without being absorbed by any other wider bandgap material. The absorption of a wide spectrum of wavelengths was achieved by recess etching almost all of the InP contact layer above the InGaAs absorption layer of a pin photodiode subsequent to ohmic contacts formation. Theoretical simulation shows responsivities above 0.6 A/W between 900 and 1600 nm and a linear reduction to 0.3 A/W at 650 nm. This makes the detector operational in both visible and near-infrared spectrum. The responsivities are 0.50, 0.77, and 0.67 A/W for 840, 1310 and 1550 nm respectively. These values confirm the potential of the device to be effective in all of the optical fiber communication wavelengths. Our calculations also show that the device can operate above 10 GHz throughout the spectrum.

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Section: Designmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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High speed pin photodetector with ultra-wide spectral responses

et al. 2005

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“…In 0.53 Ga 0.47 As based detector on InP substrate is used for detecting the light with wavelength range from 0.9 to 1.7 m which is widely used in the optical communication [2]- [6]. Photodiodes, especially of In 0.53 Ga 0.47 p-i-n type have been studied extensively over the last decade for its application in optical communication.…”

Section: Introductionmentioning

confidence: 99%

Broadband image sensors for biomedical, security, and automotive applications

Dutta

Sengupta

Krishnan

et al. 2007

Nanosensing: Materials, Devices, and Systems III

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Detectors (sensor) having detection capability ranging from visible to near-infrared region are very much required for multi-color image sensor, necessary for next generation bio-medical, bio-chem(ical), and security applications. The capability of using broadband detection in a single sensor would help to receive real-time imaging not detectable using today's CCD or CMOS sensor. We proposed a detector structure as a single sensor element (pixel) having the detection capability ranging from visible to 1.7 m, wavelengths requiring in bio-chem, biomedical cell detection and security application. This invited paper has two-fold objectives: (a) provide a comprehensive overview of conventional photo detectors array (focal-plan array) and their types, being used in today's imaging, and (b) introduce a development of multi-color detector array (image sensor) which authors pioneered. The features of proposed multi-color detector are simple structure, low-cost, high quantum efficiency, high sensitivity, and high speed. Performance results so far attained will be presented along with its possible applications.

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“…Photodiodes, especially of In 0.53 Ga 0.47 p-i-n type have been studied extensively over the last decade for its application in optical communication. Such photodetectors with frequency response as high as 40 Gb/s [6], and quantum efficiency as close to unity [5] C. Energy Generation-Higher efficiency solar cells are required to reduce solar array mass, stowed volume, and cost for numerous commercial and military applications. Conventional solar cell made of thin-film or crystal-Si (c-Si) or other thin films have limited conversion efficiency of 6% to 20% with the cost of $2-$5/Wp [7], [8].…”

mentioning

confidence: 99%

Prospects of photonic devices for energy generation, communication, and imaging

Dutta

2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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The application area of photonics (semiconductor) devices are expanding, especially in the area of next optical communication, imaging, and energy generation. This paper describes the trends of key photonic devices technologies for communication, imaging, and energy generation. The state-ofthe art of technologies in each mentioned applications are included. Focused are mainly on the common device structure which have numerous applications. Finally, future device technologies will also be addressed.

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40 Gb/s postamplifier and PIN/preamplifier modules for next generation optical front-end systems

Cited by 12 publications

References 20 publications

High speed pin photodetector with ultra-wide spectral responses

High speed pin photodetector with ultra-wide spectral responses

Broadband image sensors for biomedical, security, and automotive applications

Prospects of photonic devices for energy generation, communication, and imaging

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