40 GBd 16QAM Signaling at 160 Gb/s in a Silicon-Organic Hybrid Modulator

Lauermann, Matthias; Wolf, S.; Schindler, Philipp; Palmer, R.; Koeber, S.; Korn, D.; Alloatti, Luca; Wahlbrink, T.; Bolten, Jens; Waldow, Michael; Koenigsmann, Michael; Kohler, M.; Malsam, Dimitri; Elder, Delwin L.; Johnston, Peter V.; Phillips-Sylvain, Nathaniel; Sullivan, Philip A.; Dalton, Larry R.; Leuthold, Juerg; Freude, W.; Koos, C.

doi:10.1109/jlt.2015.2394211

Cited by 51 publications

(46 citation statements)

References 32 publications

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“…This is significantly smaller than the 410 fJ/bit demonstrated for a 4.8 mm long depletion-type modulator at a comparable PAM4 line rate of 112 Gbit/s [12]. Note that even higher data rates can be achieved by using coherent transmission schemes along with advanced modulation formats such as 16-state quadrature amplitude modulation (16QAM) [35][36][37]. However, the associated transmitter and receiver circuitry is technically much more demanding than the rather simple IM/DD scheme used here, which does not require powerful DSP or coherent receivers.…”

Section: Non-return-to-zero (Nrz) Pam4 Signaling With An Soh Mzmmentioning

confidence: 92%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

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High-speed interconnects in data-center and campus-area networks crucially rely on efficient and technically simple transmission techniques that use intensity modulation and direct detection (IM/DD) to bridge distances of up to a few kilometers. This requires electrooptic modulators that combine low operation voltages with large modulation bandwidth and that can be operated at high symbol rates using integrated drive circuits. Here we explore the potential of silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) for generating high-speed IM/DD signals at line rates of up to 120 Gbit/s. Using a SiGe BiCMOS signalconditioning chip, we demonstrate that intensity-modulated duobinary (IDB) signaling allows to efficiently use the electrical bandwidth, thereby enabling line rates of up to 100 Gbit/s at bit error ratios (BER) of 8.5 × 10 −5 . This is the highest data rate achieved so far using a silicon-based MZM in combination with a dedicated signal-conditioning integrated circuit (IC). We further show four-level pulse-amplitude modulation (PAM4) at lines rates of up to 120 Gbit/s (BER = 3.2 × 10 −3 ) using a high-speed arbitrary-waveform generator and a 0.5 mm long MZM. This is the highest data rate hitherto achieved with a sub-millimeter MZM on the silicon photonic platform.

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Section: Non-return-to-zero (Nrz) Pam4 Signaling With An Soh Mzmmentioning

confidence: 92%

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Zwickel¹,

Wolf²,

Kieninger³

et al. 2017

Opt. Express

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“…We hence expect that the SOH concept will have major impact on future implementations of optical communication systems and may also open new opportunities in ultra-fast photonic-electronic signal processing, where highly efficient low-loss devices can, e.g., enable advanced electro-optic sampling. SOH devices have previously been demonstrated to enable high-speed coherent [47,48] and non-coherent [24,49] transmission with singlepolarization line rates of up to 400 Gbit/s (100 GBd 16QAM) [50].…”

Section: Device Preparation and Characterizationmentioning

confidence: 99%

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Kieninger¹,

Kutuvantavida²,

Elder³

et al. 2018

Optica

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100

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Efficient electro-optic (EO) modulators crucially rely on advanced materials that exhibit strong electro-optic activity and that can be integrated into high-speed and efficient phase shifter structures. In this paper, we demonstrate ultra-high in-device EO figures of merit of up to n 3 r33 = 2300 pm/V achieved in a silicon-organic hybrid (SOH) Mach-Zehnder Modulator (MZM) using the EO chromophore JRD1. This is the highest materialrelated in-device EO figure of merit hitherto achieved in a high-speed modulator at any operating wavelength. The π-voltage of the 1.5 mm-long device amounts to 210 mV, leading to a voltage-length product of UπL = 320 Vµm -the lowest value reported for MZM that are based on low-loss dielectric waveguides. The viability of the devices is demonstrated by generating high-quality on-off-keying (OOK) signals at 40 Gbit/s with Q factors in excess of 8 at a drive voltage as low as 140 mVpp. We expect that efficient high-speed EO modulators will not only have major impact in the field of optical communications, but will also open new avenues towards ultra-fast photonicelectronic signal processing.

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“…SOH modulators can be designed for low energy consumptions of only a few femtojoule per bit [19], [20] or for high modulation frequencies of up to 100 GHz [21]. Moreover, SOH devices are perfectly suited for advanced modulation formats such as quadrature phase-shift keying (QPSK) and 16-state quadrature-amplitude modulation (16QAM) [22], [23]. The high modulation efficiency of SOH modulators allows to drive the devices directly from binary CMOS output ports of standard field-programmable gate arrays (FPGA) for generating advanced modulation formats without the use of digital-toanalog converters or radio-frequency (RF) drive amplifiers [24].…”

mentioning

confidence: 99%

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

Koos

Leuthold

Freude

et al. 2015

Optical Fiber Communication Conference

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Abstract-Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order optical nonlinearities, thereby making efficient electro-optic modulators challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonicorganic hybrid (POH) integration, which combine silicon-oninsulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.Index Terms-Electro-optic modulators, photonic integrated circuits, silicon photonics, plasmonics, nonlinear optical devicesElectro-optic (EO) modulators are key building blocks for highly integrated photonic-electronic circuits on the silicon

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40 GBd 16QAM Signaling at 160 Gb/s in a Silicon-Organic Hybrid Modulator

Cited by 51 publications

References 32 publications

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Silicon-organic hybrid (SOH) modulators for intensity-modulation / direct-detection links with line rates of up to 120 Gbit/s

Ultra-high electro-optic activity demonstrated in a silicon-organic hybrid modulator

Silicon-Organic Hybrid (SOH) and Plasmonic-Organic Hybrid (POH) Integration

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