40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL

Westbergh, Petter; Gustavsson, Johan S.; Kögel, Benjamin; Haglund, Åsa; Larsson, Anders; Mutig, A.; Nadtochiy, A. M.; Bimberg, D.; Joel, A.

doi:10.1049/el.2010.1405

Cited by 104 publications

(53 citation statements)

References 6 publications

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“…(2) and Eq. (1). The difference between the exact and approximate BER is very small in the low-BER region and becomes apparent only for very high BER.…”

Section: Theoretical Ber and Sensitivity For Our Experimental Systemmentioning

confidence: 94%

“…Currently, 10 Gbps links are commercialized, and lasers and photoreceivers (although with limiting amplifiers only) for 25 Gbps at the wavelength of 850 nm are becoming available. However, with increased bit-rates and the recent development of VCSELs capable of operating at 40 Gbps at the wavelength of 850 nm [1] and 44 Gbps at the wavelength of 980 nm [2], it turns out that the transmission distance in MMF at such high bit-rates is limited by the modal dispersion, if on-off keying (OOK) modulation is used. Multilevel modulation, with higher spectral efficiency, is a potential way to extend the reach of MMF-based links at high bit-rates.…”

Section: Introductionmentioning

confidence: 99%

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4-PAM for High-Speed Short-Range Optical Communications

Szczerba

Westbergh

Karout

et al. 2012

J. Opt. Commun. Netw.

126

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Abstract-In this work, we compare 4-pulse amplitude modulation and on-off keying modulation formats at high speed for short-range optical communication systems. The transmission system comprised a directly modulated verticalcavity surface-emitting laser operating at a wavelength of 850 nm, an OM3+ multimode fiber link, and a photodetector detecting the intensity at the receiver end. The modulation formats were compared both at the same bit-rate and at the same symbol rate. The maximum bit-rate used was 25 Gbps. Propagation distances up to 600 m were investigated at 12.5 Gbps. All measurements were done in real time and without any equalization.

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“…(2) and Eq. (1). The difference between the exact and approximate BER is very small in the low-BER region and becomes apparent only for very high BER.…”

Section: Theoretical Ber and Sensitivity For Our Experimental Systemmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

4-PAM for High-Speed Short-Range Optical Communications

Szczerba

Westbergh

Karout

et al. 2012

J. Opt. Commun. Netw.

126

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“…Recent years have seen an impressive increase in the speed of 850 nm GaAs-based VCSELs, reaching small signal modulation bandwidths exceeding 23 GHz and enabling error-free transmission at 40 Gbit/s back-to-back [2]. These devices show great promise as transmitters in future short-reach (rack-to-rack and boardto-board, 300 m) and very-short-reach (module-to-module and chipto-chip, 1 m) optical interconnects.…”

mentioning

confidence: 99%

“…High-speed design: The VCSEL structure is the same as in [2,4] with the addition of a regrown 59 nm-thick p-doped GaAs layer. The active region contains five strained InGaAs/AlGaAs quantum wells for high differential gain and a separate confinement heterostructure designed for fast carrier capture and low gain compression.…”

mentioning

confidence: 99%

25 Gbit/s transmission over 500 m multimode fibre using 850 nm VCSEL with integrated mode filter

Haglund

Westbergh

et al. 2012

Electron. Lett.

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An integrated mode filter in the form of a shallow surface relief was used to reduce the spectral width of a high-speed 850 nm verticalcavity surface-emitting laser (VCSEL). The mode filter reduced the RMS spectral width from 0.9 to 0.3 nm for a VCSEL with an oxide aperture as large as 5 mm. Because of reduced effects of chromatic and modal fibre dispersion, the mode filter significantly increases the maximum error-free (bit error rate , 10 212 ) transmission distance, enabling transmission at 25 Gbit/s over 500 m of multimode OM3+ fibre.Introduction: Multimode vertical-cavity surface-emitting lasers (VCSELs) operating at 850 nm have become well established light sources for optical interconnects in local area networks, storage area networks and high-performance computing owing to low power consumption, circular output beam, fast direct modulation at low currents and low-cost fabrication [1]. Recent years have seen an impressive increase in the speed of 850 nm GaAs-based VCSELs, reaching small signal modulation bandwidths exceeding 23 GHz and enabling error-free transmission at 40 Gbit/s back-to-back [2]. These devices show great promise as transmitters in future short-reach (rack-to-rack and boardto-board, 300 m) and very-short-reach (module-to-module and chipto-chip, 1 m) optical interconnects. Moreover, the low-cost 850 nm GaAs VCSEL technology also has the potential to be used at longer distances of several hundreds of metres, meeting the demand for longer optical interconnects in ever larger data centres. However, for transmission distances exceeding 300 m and data rates above 10 Gbit/s, the effects of modal and chromatic fibre dispersion significantly distort the signal [3]. At higher bit rates, reducing the effects of fibre dispersion becomes increasingly important, becoming a serious concern already at a distance of 100 m at ≥ 25 Gbit/s.In this Letter, we utilise an integrated mode filter to reduce the spectral width of a VCSEL and thereby mitigate the effects of fibre dispersion. The result is a significant increase in transmission distance, enabling error-free transmission at 25 Gbit/s over 500 m of OM3+ fibre. This is to our knowledge the first time an 850 nm VCSEL with an oxide aperture as large as 5 mm has been used to transmit such high bit rates over as long distance as 500 m.

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“…These characteristics are due to the efficient optical mode and current confinement completed by the oxidation of AlAs or AlGaAs with abundant Al components [3] . The thermal selective wet oxidation confinement technique is widely used to fabricate infrared VCSELs such as 850 and 980 nm VCSELs [4,5] . Various papers have reported the control of thermal wet oxidation processing conditions [6,7] .…”

mentioning

confidence: 99%

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

Yan¹,

Deng²,

Li³

et al. 2012

中国光学快报

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InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wetoxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.

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40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL

Cited by 104 publications

References 6 publications

4-PAM for High-Speed Short-Range Optical Communications

4-PAM for High-Speed Short-Range Optical Communications

25 Gbit/s transmission over 500 m multimode fibre using 850 nm VCSEL with integrated mode filter

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

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