40 GHz electro-optic modulation in hybrid silicon–organic slotted photonic crystal waveguides

Wülbern, Jan Hendrik; Prorok, Stefan; Hampe, Jan; Petrov, Alexander Yu.; Eich, Manfred; Luo, Jingdong; Jen, Alex K.‐Y.; Jenett, M.; Jacob, Arne F.

doi:10.1364/ol.35.002753

Cited by 64 publications

(48 citation statements)

References 14 publications

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“…Indeed, first implementations of SOH modulators with sub-volt operation [11] have been already shown, and sinusoidal modulation up to 40 GHz was demonstrated [15,16]. However, the challenge in building low-voltage high-speed SOH modulators is to create a highly conductive connecting strip.…”

Section: Soh Approachmentioning

confidence: 99%

427 Gbit/s electro-optic modulator in silicon technology

Alloatti¹,

Korn²,

Palmer³

et al. 2011

Opt. Express

187

158

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CMOS-compatible optical modulators are key components for future silicon-based photonic transceivers. However, achieving low modulation voltage and high speed operation still remains a challenge. As a possible solution, the silicon-organic hybrid (SOH) platform has been proposed. In the SOH approach the optical signal is guided by a silicon waveguide while the electro-optic effect is provided by an organic cladding with a high χ (2) -nonlinearity. In these modulators the optical nonlinear region needs to be connected to the modulating electrical source. This requires electrodes, which are both optically transparent and electrically highly conductive. To this end we introduce a highly conductive electron accumulation layer which is induced by an external DC "gate" voltage. As opposed to doping, the electron mobility is not impaired by impurity scattering. This way we demonstrate for the first time data encoding with an SOH electro-optic modulator. Using a first-generation device at a datarate of 42.7 Gbit/s, widely open eye diagrams were recorded. The measured frequency response suggests that significantly larger data rates are feasible. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, "Ultra-low-energy all-CMOS modulator integrated with driver," Opt. Express 18(3), 3059-3070 (2010). 33. S. S. Li, and W. R. Thurber, "Dopant density and temperature-dependence of electron-mobility and resistivity in n-type silicon," Solid-State Electron. ©2011 Optical Society of America

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Section: Soh Approachmentioning

confidence: 99%

427 Gbit/s electro-optic modulator in silicon technology

Alloatti¹,

Korn²,

Palmer³

et al. 2011

Opt. Express

187

158

View full text Add to dashboard Cite

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“…Excluding the slow-light effect, we estimate the EO polymer is poled with an efficiency of 89pm/V in the slot. [6]. The fabrication process of these devices involves the poling of the EO polymer at an elevated temperature.…”

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confidence: 99%

“…The electro-optic coefficient (r 33 ) of EO polymers can be several times larger than that of lithium niobate. In addition to conventional all-polymer devices [1,2] , combination of silicon photonics and EO polymer have shown to enable compact and high performance integrated devices [3], such as slot waveguide Mach-Zehnder Interferometer (MZI) modulators [4], slot waveguide ringresonator modulators [5], and slot Photonic Crystal Waveguide (PCW) modulators [6]. The fabrication process of these devices involves the poling of the EO polymer at an elevated temperature.…”

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confidence: 99%

Wide optical spectrum range, subvolt, compact modulator based on an electro-optic polymer refilled silicon slot photonic crystal waveguide

et al. 2013

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We design and demonstrate a compact and low-power band-engineered electro-optic (EO) polymer refilled silicon slot photonic crystal waveguide (PCW) modulator. The EO polymer is engineered for large EO activity and near-infrared transparency. A PCW step coupler is used for optimum coupling to the slow-light mode of the band-engineered PCW. The half-wave switching-voltage is measured to be Vπ=0.97±0.02V over optical spectrum range of 8nm, corresponding to the effective in-device r33 of 1190pm/V and Vπ×L of 0.291±0.006V×mm in a push-pull configuration. Excluding the slow-light effect, we estimate the EO polymer is poled with an efficiency of 89pm/V in the slot. [6]. The fabrication process of these devices involves the poling of the EO polymer at an elevated temperature. Unfortunately, the leakage current due to the charge injection through silicon/polymer interface significantly reduces the poling efficiency in narrow slot waveguides (slot width, S w <200nm). Among the abovementioned structure, the slot PCW can support optical mode for S w as large as 320nm [7]. Such a wide slot was shown to reduce the leakage current by two orders of magnitude resulting in 5х improvement in the in-device r 33 compared to a slot PCW with S w =75nm [7].One problem remains among slot PCW modulators is their narrow operating optical bandwidth of <1nm [8][9][10] because of the high group velocity dispersion (GVD) in the slow-light optical spectrum range. To broaden the operating optical bandwidth of PCW modulators, lattice shifted PCWs can be employed, where the spatial shift of certain holes can modify the structure to provide low-dispersion slow light [11][12][13][14][15].In this letter we report a symmetric MZI modulator based on band-engineered slot PCW refilled with EO polymer, SEO125 from Soluxra, LLC. SEO125 exhibits exceptional combination of large EO activity, low optical loss, and good temporal stability. Its r 33 value of poled thin films is around 125pm/V at the wavelength of 1310 nm, which is measured by the Teng-Man reflection technique. The design and synthesis of SEO125 encompasses recent development of highly efficient nonlinear optical chromophores with a few key molecular and material parameters, including large β values, good near-infrared transparency, excellent chemicaland photo-stability, and improved processability in polymers [16]. Using a band-engineered EO polymer refilled slot PCW with S w =320nm, we demonstrate a slow-light enhanced effective in-device r 33 of 1190pm/V over 8nm optical spectrum range. Excluding the slow-light effect, we estimate in-device material' r 33 of 89pm/V for SEO125 in the slot that show 51% improvement compared to the results (59pm/V) in [7]. A schematic of the device on silicon on insulator (SOI) (Si thickness=250nm, oxide thickness=3μm) is shown in Fig. 1 (a). The input and output strip waveguides are connected to the device using a strip-to-slot waveguide mode converter. PCW couplers consisting of a fast-light section [17] connect the mode converters to a 300μm-long slow-ligh...

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“…The SOH platform [7][8][9] is an alternative solution offering large bandwidth, low energy consumption and suitability for advanced phase encoded modulation.…”

Section: Modulatorsmentioning

confidence: 99%

Silicon-organic hybrid fabrication platform for integrated circuits

Korn

Alloatti

Lauermann

et al. 2012

2012 14th International Conference on Transparent Optical Networks (ICTON)

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The combination of CMOS compatible Silicon-On-Insulator (SOI) fabrication technology with organic cover materials constitutes the Silicon-Organic Hybrid (SOH) fabrication platform, which shows innovative functionality for the making of integrated optical circuits. We report on experimental demonstrations of essential building blocks for transceivers, while relying only on well-known SOI processing steps and simple post processing of the organic materials. Keywords: Silicon-organic hybrid, silicon-on-insulator, photonic integrated circuits, modulators, electro-optic devices. INTRODUCTIONSilicon-Organic Hybrid (SOH) technology [1] offers new active optical waveguides and integrated optoelectronic circuits to address rising demands on energy consumption, speed and ease of fabrication for applications in communication. Any functionality not available from pure silicon waveguides is created from the combination of Silicon-On-Insulator (SOI) structures and organic cladding materials, which are chosen according to their often unique properties. There is a competition between photonic integrated circuit (PIC) platforms based on material systems such as III-V semiconductors, III-V components on silicon, germanium on silicon, lithium niobate, silicon nitride and more. The choice of the platform depends on the specific application and target parameters, but a detailed analysis is beyond the scope of this paper. Here we assume a desire to use SOI technology, because of highest practical integration density, existing infrastructure (scalability, potential high volume, low unit costs) and the potential for future integration with electronics. The choice is also influenced by the range of available devices, i.e. available building blocks to make complete integrated circuits.In this paper we present the SOH platform as a solution to provide signal processing with high-speed SOH electro-optic phase modulators and SOH low voltage phase shifters for tuning passive structures such as filters (e.g. delay interferometers). Also an SOH technology-compatible detector option is discussed, which is based on sub-bandgap or surface state absorption in silicon. We elaborate the SOH concept by showing experimental results for each device, listing particular advantages and discuss challenges ahead of the road.

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40 GHz electro-optic modulation in hybrid silicon–organic slotted photonic crystal waveguides

Cited by 64 publications

References 14 publications

427 Gbit/s electro-optic modulator in silicon technology

427 Gbit/s electro-optic modulator in silicon technology

Wide optical spectrum range, subvolt, compact modulator based on an electro-optic polymer refilled silicon slot photonic crystal waveguide

Silicon-organic hybrid fabrication platform for integrated circuits

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