40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Har-Lavan, Rotem

doi:10.1109/jphotov.2013.2270347

Cited by 36 publications

(29 citation statements)

References 116 publications

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“…Additionally, V bi values indicative of inversion have been reported in the past, but they were not identified as such, and the implications were not discussed . In a recent review article[3a] we suggested that these devices operate in inversion, but we did not have experimental evidence of strong inversion.…”

Section: Results Of Fits To Equation In the Linear Region Of Ln(j) Vmentioning

confidence: 95%

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

Erickson

Zohar

Cahen

2014

Advanced Energy Materials

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The built‐in voltage of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)–nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p–n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field‐effect transistor.

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Section: Results Of Fits To Equation In the Linear Region Of Ln(j) Vmentioning

confidence: 95%

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

Erickson

Zohar

Cahen

2014

Advanced Energy Materials

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“…If the interface was better passivated, larger barrier height could be expected. Furthermore, as a type of inversion layer solar cell, the high conductivity of the inversion layer may lead to good transverse transportation and then high FF can be achieved.…”

Section: Resultsmentioning

confidence: 99%

Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Zhou

Yang

et al. 2020

Solar RRL

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In this article, a novel hot wire oxidation–sublimation deposition (HWOSD) technique, as an optional technology, is developed to prepare molybdenum oxide (MoOx) thin films. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole‐selective transport layer (HSL) are fabricated. A power conversion efficiency up to 21.10% is achieved on a champion SHJ solar cell using a 14 nm MoOx layer as the HSL. Dark current density–voltage–temperature (J–V–T) characteristics of the SHJ solar cell are measured at temperatures ranging from 200 to 380 K. Transport processes including thermionic emission of electrons over the potential barrier and quantum‐assisted tunneling of holes through the gap states in the MoOx layer are used to fit the J–V curves of the MoOx/n‐c‐Si heterojunction. The investigation of the transport mechanisms provides a better understanding of the characteristics of the novel SHJ solar cells and it is helpful to fully demonstrate the potential of such kinds of solar cells in the future.

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“…We note that there are several possible effects from the salt HTM that could enhance device performance. We can exclude inversion induced by surface charge, which would have been seen in the EBIC. The HTM may block shunts from forming and causing parasitic dark currents.…”

Section: J–v Characteristics Of Perovskite Solar Cells (T = Tbapf6 Pmentioning

confidence: 99%

Interface Modification by Simple Organic Salts Improves Performance of Planar Perovskite Solar Cells

Siram

Das

Mukhopadhyay

et al. 2016

Adv Materials Inter

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significantly improve the performance of MAPbBr 3 cells, [20] this is not the case for CsPbBr 3 -based devices. [21] It is important to note that all reports on devices without HTM are for cells with the perovskite in/on mp scaffolds, and not in a flat (planar) cell configuration, that is, with the perovskite directly on dense TiO 2 . In principle, provided the perovskites transfer charges efficiently, modification of their interface may facilitate directional charge transfer and enhance device performance, analogous to surface modifications in common semiconductor devices [22] or conductors. [23] Here we show that a simple organic salt, tetrabutylammonium hexafluorophosphate (TBAPF 6 ), deposited with small amounts of polymethyl methacrylate (PMMA), affords planar methylammonium lead bromide (MAPbBr 3 (Cl)) devices (fabricated on dense TiO 2 ) having 4.4% efficiency and V OC = 1.24 V, a significant improvement in comparison with similar planar devices but without the modified interface (0.64% efficiency, V OC = 0.82 V). Our findings suggest that tuning interfacial properties with simple polar compounds may represent an advantageous approach to improving perovskite solar cell efficiency. Thus, planar devices without conventional hole conductors may present a cost-efficient alternative to currently employed architectures.We used readily available tetrabutylammonium salts (TBAX, X = halide, BF 4 , or PF 6 ) to modify the interfacial properties. The salts possess high dielectric constant and good charge transporting characteristics, [24] and have very good solubility in various organic solvents. TBAX salts (TBABr, TBAI, TBABF 4 , and TBAPF 6 ) were spin-coated on MAPbBr 3 (Cl) perovskite layers at room temperature. When we deposited the TBABr and TBAI, the perovskite film was etched (more so with TBABr, Figure S1, Supporting Information), whereas the films are stable upon deposition of TBAPF 6 ( Figure S1, Supporting Information). Optical transmission spectroscopy and X-ray diffraction (XRD) of perovskite/TBAPF 6 (and also of perovskite/TBABF 4 ) films on glass substrates ( Figure S2, Supporting Information) show that the perovskite structure and absorption spectrum are not changed.The devices were fabricated as follows. The CH 3 NH 3 PbBr 3 (Cl) perovskite film was deposited by spincoating the solution of PbCl 2 and CH 3 NH 3 Br in a 1:3 ratio on the dense TiO 2 (d-TiO 2 ) coated FTO substrate (planar cell architecture), and subsequently annealed (chloride was not detected in the film but its traces can be present). [25] Then TBAPF 6 was deposited on the perovskite layer from solutions of different concentrations, and coated with gold. The corresponding FTO/d-TiO 2 /MAPbBr 3 (Cl)/TBAPF 6 /Au solar cell characteristics are given in Figure S3 and Table S1 (Supporting Information) Perovskite solar cells have recently become a focus of interest because of their high efficiency that is achieved using lowcost constituents and fabrication via solution processing techniques. [1][2][3][4][5][6] Commonly used perovskites are...

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40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Cited by 36 publications

References 116 publications

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Interface Modification by Simple Organic Salts Improves Performance of Planar Perovskite Solar Cells

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40 Years of Inversion Layer Solar Cells: From MOS to Conducting Polymer/Inorganic Hybrids

Cited by 36 publications

References 116 publications

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

n‐Si–Organic Inversion Layer Interfaces: A Low Temperature Deposition Method for Forming a p–n Homojunction in n‐Si

Silicon Heterojunction Solar Cells with MoOx Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Interface Modification by Simple Organic Salts Improves Performance of Planar Perovskite Solar Cells

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Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition