400-Å high aspect-ratio lines produced in poylmethyl methacrylate (PMMA) by ion-beam exposure

Karapiperis, L.; Lee, C. A.

doi:10.1063/1.91137

Cited by 38 publications

(7 citation statements)

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“…[16][17][18] The most prominent application of lithography is that of UV-mask lithography, which is widely used in the semiconductor industry. [20][21][22][23][24][25][26] A publication by Grunze et al is of particular note because it introduces the possibility for chemical lithography using an electron beam. Therefore, industry and academia invest intensive effort in developing UV and deep-UV lithographic techniques, which can provide structural resolution down to 80 nm.…”

Section: Introductionmentioning

confidence: 99%

“…Both UV, particle, and e-beam lithography are well documented, and a large number of recent publications are available. [20][21][22][23][24][25][26] A publication by Grunze et al is of particular note because it introduces the possibility for chemical lithography using an electron beam. Focused electrons are used to chemically modify the terminal nitro groups of self-assembled monolayers (SAMs) to amines; the subsequent functionalization with carboxylic acid anhydrides was then demonstrated (see Figure 2).…”

Section: Introductionmentioning

confidence: 99%

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Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized Devices

2004

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The size regime for devices produced by photolithographic techniques is limited. Therefore, other patterning techniques have been intensively studied to create smaller structures. Scanning-probe-based patterning techniques, such as dip-pen lithography, local force-induced patterning, and local-probe oxidation-based techniques are highly promising because of their relative ease and widespread availability. The latter of these is especially interesting because of the possibility of producing nanopatterns for a broad range of chemical and physical modification and functionalization processes; both the production of nanometer-sized electronic devices and the formation of devices involving (bio)molecular recognition and sensor applications is possible. This Review highlights the development of various scanning probe systems and the possibilities of local oxidation methods, as well as giving an overview of state-of-the-art nanometer-sized devices, and a view of future development.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized Devices

2004

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“…1 An electron-beam microcolumn technique has previously been demonstrated, 2 in which a 10 nm probe size with a beam current of 1 nA at 1 keV has been achieved. 4 Figure 1 shows a proposed maskless ion beam lithography system using an array of microcolumns. One of the advantages of using ions over electrons is that the resists are inherently more sensitive to ions, by nearly two orders of magnitude, which can result in a higher throughput for ion beams.…”

Section: Introductionmentioning

confidence: 99%

Characterization of multicusp-plasma ion source brightness using micron-scale apertures

Scott

King

Leung

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inDevelopment of ion injection into the BNL test electron beam ion source using a prototype low energy beam transfer switchyard and a hollow cathode ion source (abstract)a) Rev. Sci. Instrum. 79, 02B318 (2008); 10.1063/1.2821595 Optimization of a compact multicusp He + ion source for double-charge-exchanged He − beam Rev. Sci. Instrum. 77, 03B512 (2006); 10.1063/1.2165775 High-intensity positive beams extracted from a compact double-chamber ion source Rev. Sci. Instrum. 76, 063301 (2005); 10.1063/1.1904223High current density beamlets from a rf argon source for heavy ion fusion applications Rev.The brightness of a multicusp-plasma ion source was characterized to determine its suitability for a proposed maskless ion-beam lithography system. In order to be competitive with similar systems utilizing electron sources, the brightness requirement must be met to satisfy throughput demands. For this requirement, 1 nA into each beam diameter of 50 nm is needed at the target plane; this implies a brightness of about 1000 A/cm 2 /sr at the entrance to the objective lens. The brightness of the source has been characterized using 5-m-diam extraction apertures under two different extraction configurations: ͑1͒ with the apertures directly illuminated by the source and ͑2͒ with the apertures flooded using an extraction system. The maximum brightness achieved for either configuration was 15 A/cm 2 /sr at 3 keV beam energy, He ϩ ions, and continuous wave operation. Although this configuration falls short of the requirement for high-throughput exposures, it is also possible to operate the multicusp-plasma ion source in pulsed mode. This would give higher current densities, which may also give adequate brightness as well.

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“…Experimental ion beam and x -r a y exposures (1,2) show promise for resolution below 0.1 ~m. Electron beam exposure (3) provides resolution below 0.5 ~m and is presently used for patterning high resolution photomasks.…”

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confidence: 98%

High Resolution Photomasks with Ion‐Bombarded Polymethyl Methacrylate Masking Medium

Maclver

1982

J. Electrochem. Soc.

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A new method for fabricating high resolution, hard-surface photomasks is proposed and investigated experimentally. The masks are prepared by first patterning a PMMA film deposited on a clear photomask plate by electron beam or deep u.v. exposure and then implanting 28Si+ ions until the PMMA film is converted to an opaque and hard masking medium. Results show that resolution is limited by the patterning process. Submicrometer-size features are resolved in the masks and they were used to transfer micrometer-size patterns to an SiO2 layer on a silicon wafer. Optical properties are suitable for both near u.v. (300-400 nm) and deep u.v. (200-250 nm) exposures. Mechanically, the films are well adhered to the substrate and the masks are more abrasion resistant than chromium masks. They resist chemical attack by acids, bases, and organic solvents, but are readily removed in an oxygen plasma. The ionbombarded PMMA film composition is mainly carbon in a highly cross-linked structure.As pattern dimensions become smaller to meet the demands of very large scale integration, there is a continuing search for improved methods for imaging those patterns on the semiconductor wafer. Experimental ion beam and x -r a y exposures (1, 2) show promise for resolution below 0.1 ~m. Electron beam exposure (3) provides resolution below 0.5 ~m and is presently used for patterning high resolution photomasks. Submicrometer resolution has also been demonstrated using deep ultraviolet (u.v.) exposures (4). Polymethyl methacrylate (PMMA) is an important resist for all of these high resolution imaging techniques (5).It is k n o w n (6) that ion b o m b a r d m e n t of organic materials can lead to structural changes on the molecular level caused by b o m b a r d m e n t -i n d u c e d bond r e a r r a n g e m e n t processes. Such processes result in changes in the optical and mechanical properties of organic films (7). Using high doses of 40Ar+ ions, Hashimoto et al. (8) have modified the properties of near u.v. photoresist films, such as AZ 1350, so that they function as the masking medium in an otherwise conventional photomask for integrated circuit lithography. We have e~tended that concept to include resists, such as PMMA, that are sensitive to more energetic radiation and can be patterned by high resolution lithographic methods. The objective of this work is to take advantage of the higher resolution associated with the use of such resists, coupled with the elimination of a n etching step, to improve the quality and simplify the fabrication of high resolution hard-surface photomasks.This paper describes a mask fabrication process wherein a PMMA film deposited on a transparent substrate is first patterned by electron beam or deep u.v. exposure and then bombarded with energetic 2sSi+ ions. Resolution results are presented. Optical properties, abrasion resistance, and chemical resistance are evaluated in terms of practical photomask requirements. A film composition analysis based on Auger electron and x -r a y photoelectron spectroscopies is ...

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400-Å high aspect-ratio lines produced in poylmethyl methacrylate (PMMA) by ion-beam exposure

Abstract: We report preliminary results on the fabrication of 400- and 2600-Å deep lines in polymethyl methacrylate (PMMA) by means of H+ exposure through a holographically produced fine conformal gold mask.

Cited by 38 publications

References 3 publications

Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized Devices

Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized Devices

Characterization of multicusp-plasma ion source brightness using micron-scale apertures

High Resolution Photomasks with Ion‐Bombarded Polymethyl Methacrylate Masking Medium

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