42.4: Characterization of Electrochemically‐Active Defects in Si‐Film Laser‐Crystallized with Directional SLS by Measuring the Stress Release during Secco Etching

Abstract

It has been verified that the crystal quality of directional SLS film achieves a position between those of ELC and CLC. The SLS film contains some electrochemically‐active in‐grain defects, which is hard to be passivated by hydrogen; this kind of defects are not observed in CLC nor ELC films.