425-to-25-GHz CMOS-Integrated Downconverter

Momson, Ibukunoluwa; Lee, Suhwan; Dong, Shenggang; O, Kenneth K.

doi:10.1109/lssc.2021.3067192

Cited by 10 publications

(11 citation statements)

References 11 publications

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“…4(d) can also be used for subharmonic mixing [53], but a wideband matching with high isolation is required to achieve the desired performance. The same issue can be found in the push-push doubler-based mixers introduced in [54] and [55].…”

Section: A Bi-directional Subharmonic Mixermentioning

confidence: 68%

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

Abdo

Gomez

Wang

et al. 2022

IEEE J. Solid-State Circuits

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This article introduces a four-element 300-GHzband bi-directional phased-array transceiver (TRX). The TRX utilizes the same antenna, signal path, and local oscillator (LO) circuitry to operate either in transmitter (TX) mode or receiver (RX) mode. The TX mode adopts the outphasing technique to increase the average output power for higher order modulation schemes by utilizing the two mixers that are connected directly to the antenna in a mixer-last fashion. The two signal paths also enable the canceling of the LO feed-through (LOFT). The RX mode also benefits from the LOFT cancellation technique to suppress the LO emission, which is a common issue of the mixer-first RXs. The RX has a separate Hartley operation mode to reject the image signal coming from the TX. The TRX chip was implemented using CMOS 65-nm process, and a four-element phased array was implemented by stacking liquid crystal polymer (LCP) flexible printed circuit boards (PCBs). The stacked structure provides the required narrow antenna pitch at the 300-GHz band. The measured beam angle range is from Manuscript

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Section: A Bi-directional Subharmonic Mixermentioning

confidence: 68%

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

Abdo

Gomez

Wang

et al. 2022

IEEE J. Solid-State Circuits

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“…Coherent detection up to 1.2 THz has been demonstrated in CMOS [33]. The lowest measured DSB noise figures for CMOS receivers are 11 dB at 260 GHz [34], 11.5 dB at 280 GHz [35] and 14 dB at 420 GHz [36]. The noise figure increases with a slope of ~15 dB per decade as the output frequency is increased.…”

Section: B Noise Figure Of Receiver Rf Front-endsmentioning

confidence: 98%

“…Once again, referring back to Figs. 5 and 6, the CMOS transmitter and receiver performance at ~300 GHz can be better than that demonstrated thus far, and 400-GHz transceivers with adequate performance should also be possible [36], [80]. This section presented expanded and updated discussions in [2], [3] and additional contents from [13].…”

Section: Communicationmentioning

confidence: 99%

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

Choi

Zhu

et al. 2023

IEEE Open J. Solid-State Circuits Soc.

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CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC's) technology is emerging as a means for realization of capable and affordable systems that operate at frequencies near 300GHz and higher. This is lowering a key barrier for utilizing the sub-millimeter electromagnetic waves in everyday applications. Despite the fact that the unity maximum available gain frequency, f max of NMOS transistors (with connections to the tope metal layer) has peaked at ~320 GHz, signal generation up to 1.33 THz, coherent detection up to 1.2 THz and incoherent detection up to ~10 THz have been demonstrated using CMOS integrated circuits. Furthermore, highly integrated rotational spectroscopy transceivers operating at frequencies up to near 300 GHz, 300-GHz and 400-GHz concurrent transceiver pixels and arrays for high resolution radar imaging, and 300-GHz and 390-GHz transmitters, and 300-GHz receivers for high data-rate communication have been demonstrated in CMOS. The performances of these CMOS circuits are sufficient or close to being sufficient to support electronic smelling using rotational spectroscopy that can detect and quantify concentrations of a wide variety of gases; imaging that can enable operation in a wide range of visually impaired conditions; and high-bandwidth communication. Lastly, techniques for affordable packaging and testing sub-millimeter wave systems are suggested based on experimental demonstrations.

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“…The RF port is connected to the waveguide antenna through the GSG pad. Input noise with a power spectral density of N i = kT = −174 dBm/Hz was probed onto the chip from a waveguide antenna directed to an absorber at room temperature 10 . Figure 4B shows the comparison between the simulation result and the measured result of SSB NF.…”

Section: Measurementmentioning

confidence: 99%

“…Input noise with a power spectral density of N i = kT = −174 dBm/Hz was probed onto the chip from a waveguide antenna directed to an absorber at room temperature. 10 Figure 4B shows the comparison between the simulation result and the measured result of SSB NF. The minimum NF in the simulation is 10.8 dB, while the measured minimum NF is 15.5 dB.…”

Section: Measurementmentioning

confidence: 99%

A 220‐GHz CMOS passive subharmonic downconverter for low‐IF applications

Huang

2022

Micro & Optical Tech Letters

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This paper presents a 220-GHz subharmonic downconverter with high conversion gain (CG) and low noise figure (NF) implemented in 28 nm bulk CMOS, including a core mixer and an intermediate frequency (IF) amplifier. Based on the traditional quasi-subharmonic mixer, new gate-shorted technology is presented to improve NF and CG by adding a source inductor to reduce the loss of radiofrequency signals. In addition, the impedance transformation network provides passive voltage gain to suppress the noise of the IF amplifier. The downconverter achieves a minimum single-sidebandNF of 15.5 dB and a maximum CG of 21.3 dB when the IF frequency is 10 MHz. The 1 dB compression point of the downconverter is −30 dBm and consumes 8 mA current with an operating voltage of 0.9 V. The core area of the chip is 200 × 160 µm 2

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425-to-25-GHz CMOS-Integrated Downconverter

Cited by 10 publications

References 11 publications

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

A Bi-Directional 300-GHz-Band Phased-Array Transceiver in 65-nm CMOS With Outphasing Transmitting Mode and LO Emission Cancellation

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

A 220‐GHz CMOS passive subharmonic downconverter for low‐IF applications

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