45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

Yu, Shaofeng; Lu, Jiong-Ping; Mehrad, F.; Bu, H.; Shanware, A.; Ramin, M.; Pas, M. F.; Visokay, R.; Vitale, Steven A.; Yang, Shixuan; Jiang, Pei-Chuen; Hall, L.; Montgomery, Christopher B.; Obeng, Yaw S.; Bowen, C.; Hong, Hyesook; Tran, J.; Chapman, R. A.; Bushman, Scott; Machala, S.; Blatchford, J. W.; Kraft, R.; Colombo, Luigi; Johnson, S.; McKee, B.

doi:10.1109/iedm.2005.1609312

Cited by 5 publications

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“…In the conventional P incorporation process, P ions are implanted into a poly-Si gate before Ni silicide gate formation and introduced to the Ni silicide/SiO 2 interface with the ''snow-plow effect'' during silicidation (pre-doping process). [1][2][3][4][5][6][7]12) However, not only P segregation but also changes in crystallinity and Ni-Si ratio of the silicide layer occur in the pre-doping process. 6,8) These changes of the film structure make it difficult to evaluate the unadulterated effect of P segregation, since they are also possible causes of È eff modulation.…”

Section: Methodsmentioning

confidence: 99%

“…A nickel fully silicided (Ni-FUSI) gate is a good candidate for the metal gate electrode because of its process compatibility with the present large-scale integration fabrication and superior device performance. [1][2][3][4] The difficulty of effective work function (È eff ) control at the Ni-FUSI/gate dielectric interface is one of the major impediments to the application of a Ni-FUSI gate for future CMOS devices. È eff s corresponding to the Si conduction band edge (Si-E c $ 4:1 eV) and Si valence band edge (Si-E v $ 5:2 eV) are required for n-and p-type transistors to realize low threshold-voltage (V th ) operation in bulk CMOS devices, whereas the È eff of NiSi is about 4.6 eV, which corresponds to Si midgap level.…”

Section: Introductionmentioning

confidence: 99%

“…The È eff of the Ni-FUSI gate can be controlled by impurity segregation at Ni-FUSI/SiO 2 and SiON interfaces. [1][2][3][4][5][6][7][8] È eff decreases with increasing interface densities of arsenic (As), phosphorus (P), and antimony (Sb). On the other hand, È eff increases with increasing B interface density.…”

Section: Introductionmentioning

confidence: 99%

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Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems

Tsuchiya

Yoshimoto

Koga

et al. 2008

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The effect of Ni to Si ratio on effective work function (È eff ) modulation with phosphorus (P) segregation at the Ni silicide/ SiO 2 interface was systematically investigated. To discriminate the P segregation effect from other parasitic possibilities of È eff modulation, which are changes in Ni-Si ratio and crystallinity including crystal grain orientation near the interface, we applied a P post-doping process for Ni 2 Si (Ni 3 Si 2 )/SiO 2 , NiSi/SiO 2 , and NiSi 2 /SiO 2 systems. In the post-doping process, P atoms were segregated to the Ni silicide/SiO 2 interface after Ni silicide gate formation; hence, independent control of a desired interface P density can be realized. In addition, we newly developed a thin Ti-inserted NiSi 2 formation process, by which NiSi 2 can be formed at a temperature as low as 450 C, thus revealing the P-segregated È eff modulation effect at the NiSi 2 /SiO 2 interface for the first time. As a result, the largest È eff modulation (ÁÈ eff ¼ À0:45 eV) occurs at the P-segregated NiSi 2 /SiO 2 interface, and a È eff of near the Si conduction band edge (4:13 AE 0:04 eV) was realized, although the obtained È eff values with P segregation at Ni 2 Si (Ni 3 Si 2 )/SiO 2 and NiSi/SiO 2 were 4:38 AE 0:01 eV (ÁÈ eff ¼ À0:32 eV) and 4:37 AE 0:01 eV (ÁÈ eff ¼ À0:29 eV) for the same P dose, respectively. Moreover, we found that ÁÈ eff at the NiSi 2 /SiO 2 interface is larger than those at the NiSi/SiO 2 and the Ni 2 Si (Ni 3 Si 2 )/SiO 2 interfaces, even when the segregated P densities are the same. These results can be explained by an increase in the density of effective interface dipole for È eff modulation at a high-Si-content interface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems

Tsuchiya

Yoshimoto

Koga

et al. 2008

jjap

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“…Uma vantagem desta abordagem é que a função trabalho da porta pode ser ajustada por implantação de dopantes. O NiSi tem demonstrado ser muito bom candidato graças a seu comportamento como mid-gap e sua facilidade de integração pois a silicetação se faz em baixa temperatura 31 .…”

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A meus pais e minha irmã pelo apoio, carinho, incentivo e compreensão nos momentos difíceis, e de ausência, vocês são tudo para mim. Ao Prof. Dr. Sorin Cristoloveanu, pela oportunidade da realização do doutorado sanduiche (Brasil/França), além da atenção, incentivo, e discussões no decorrer deste trabalho. Ao amigo, mais que amigo Luciano Mendes Camillo pela compreensão, ajuda, incentivo, confiança, companheirismo e milhares de discussões, muito obrigada. A minha amiga irmã Débora pela compreensão, amizade, apoio, e companheirismo. E em especial à minha afilhada Karolina, meu maior presente. Ao Prof. Dr. Salvador P. Gimenes e Noel Rodriguez pela atenção, incentivo, e discussões no decorrer deste trabalho. Aos amigos Milene Galeti, Michele Rodrigues e Vinícius Heltai pelo incentivo, discussões, e apoio durante esta jornada. Aos colegas grupo SOI-CMOS pelo incentivo, discussões, e apoio durante este trabalho. Ao Laboratório de Sistemas Integráveis da EPUSP, e ao IMEP-França pela infra-estrutura oferecida e ao CNPq e CAPES pelo apoio financeiro que permitiram a realização deste trabalho. A meus avós Alcides, Dirce e Pedro (in memorian) que não puderam ver onde cheguei, mas tenho certeza que mesmo de longe olham por mim. À minha avó Medina, pelo apoio, incentivo e principalmente por entender os momentos que não estive presente. A minha eterna professora de piano, Agda que desde 1.993 acompanha minha evolução, me apoiando e incentivando, na música, na minha carreira profissional e na minha vida pessoal.

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45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

Cited by 5 publications

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Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems

Estudo da mobilidade em dispositivos SOI planares e de múltiplas portas.

Multigate MOSFET Technology

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45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

Cited by 5 publications

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Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems

Estudo da mobilidade em dispositivos SOI planares e de múltiplas portas.

Multigate MOSFET Technology

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Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems

Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO₂ Systems