450 mm Silicon Wafers Challenges - Wafer Thickness Scaling

Goldstein, Michael; Watanabe, Masaharu

doi:10.1149/1.2980288

Cited by 17 publications

(6 citation statements)

References 5 publications

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“…Biaxial flexural tests on plates, which have been used to evaluate the strength of ceramics for more than 40 years in various configurations such as ball-on-ring, 111,112 uniform pressure, 113 ring-on-ring, 114 or piston-on-threeballs, 115 have been adapted to investigate the biaxial strain effects in UTCs. 116,117,150 Properties such as phonon or electronic deformation potentials 118,119 are measured through these tests to find the fracture strength 96,[120][121][122] or to investigate the 2D strain effects on the electrical behavior of MOSFETs. 123,124 In the case of thin samples, the fracture strength is influenced by the roughness and morphology of the surface, 125 which in turn are affected by the surface defects introduced through backside grinding, polishing, chemical etching, and edge defects caused by wafer sawing or dicing.…”

Section: B Biaxial Bending Of Utcsmentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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Section: B Biaxial Bending Of Utcsmentioning

confidence: 99%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…Silicon epitaxial growth has a long history [1,2] in the electronics industry. Its industrial processes use chlorosilane gases, such as trichlorosilane (SiHCl3) and dichlorosilane (SiH2Cl2) [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Muroi

Matsuo

Habuka

et al. 2018

Materials Science in Semiconductor Processing

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A silicon epitaxial growth process in a trichlorosilane-hydrogen system was evaluated using a quartz crystal microbalance (QCM) placed at the exhaust of a chemical vapor deposition reactor designed for the Minimal Fab. The QCM showed two types of the frequency decrease behaviors, that is, i) a quick shift due to the gas property change caused by the trichlorosilane gas introduction into the ambient hydrogen and ii) the continuous and gradual decrease due to the byproduct deposition on the QCM surface during the silicon epitaxial growth. Because both i) and ii) showed a relationship with the silicon epitaxial growth rate, the in-situ information obtained by the QCM was expected for the real time monitoring of the film deposition process.

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“…Significant advances in the information and communication technology has expanded the semiconductor silicon device demand. The silicon electronic device manufacturing technology has acknowledged the trend in the large diameter wafer with the shrinking design rule [1,2]. While the large diameter wafer can produce a huge number of low cost electronic devices, the significant initial cost for the equipment is a serious issue.…”

Section: Introductionmentioning

confidence: 99%

Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

Irikura

Muroi

Yamada

et al. 2018

Materials Science in Semiconductor Processing

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Effective process conditions to utilize a slim vertical silicon chemical vapour deposition reactor were studied. Based on a numerical analysis taking into account the gas flow, heat and species transport, particularly over a wide range of the trichlorosilane gas concentrations from 1% to 40 % in ambient hydrogen, a heavy and cold gas was shown to quickly go downward to the hot wafer surface through the slim vertical gas channel. The gas phase near the wafer was sufficiently cooled to produce a cold wall thermal condition which enabled the trichlorosilane gas consumption only at the wafer surface, even in a non-axisymmetric and non-steady condition. The slow wafer rotation, less than 30 rpm, had a considerable effect, such as that increasing the gas phase temperature gradient for suppressing the gas phase reaction.

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450 mm Silicon Wafers Challenges - Wafer Thickness Scaling

Abstract: Pilot line using 450 mm wafer will start in 2012 according to ITRS. One of the most important discussions is wafer thickness scaling from 300 mm wafer to 450 mm wafer. It is discussed in terms of empirical scaling, gravitational sag, thermal stress and fracture strength.

Cited by 17 publications

References 5 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

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