49.4: High‐definition Top‐emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

Sugisawa, Nozomu; Sasaki, Toshiki; Ushikubo, Takahiro; Ohsawa, Nobuharu; Seo, Satoshi; Hatano, Kaoru; Nagata, Tkaaki; Fukai, Shuji; Murakawa, Tsutomu; Yoshitomi, Shuhei; Hayakawa, Masahiko; Koyama, Jun; Yamazaki, Shunpei; Okazaki, Kenichi; Sakakura, Masaaki

doi:10.1889/1.3621427

Cited by 35 publications

(27 citation statements)

References 18 publications

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“…5 We have applied them to low-power-consumption displays. [6][7][8][9] We also have applied CAAC IGZO-TFTs to non-displays using extremely low off-state current such as in non-volatile oxide semiconductor RAM (NOSRAM), 10 a normally-off processor, 11 and an image sensor 12 as novel applications of an oxide semiconductor. A CAAC is closer to a single crystal than an amorphous material.…”

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New crystalline structure yields reliable thin-film transistors

Yamazaki¹

2012

SPIE Newsroom

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Oxide semiconductor thin-film transistors with an active layer of highly crystalline indium gallium zinc oxide are very dependable and have extremely low off-state current.Oxide semiconductor thin-film transistors (TFTs) have attracted attention as leading devices for next-generation displays because of their transparency, flexibility, high-speed operations, and larger sizes. These features are not available simultaneously in existing silicon-based TFTs. The current drivability of amorphous silicon TFTs is insufficient for use in organic LED (OLED) displays, and the poor uniformity of polycrystalline silicon TFTs is a critical issue for large-size displays. Oxide semiconductor TFTs are expected to overcome such shortcomings. Regarding indium gallium zinc oxide (IGZO)-based semiconductor materials, the crystalline structure of InGaZnO 4 was found by Kimizuka and colleagues in 1985, and IGZO-related materials were then studied in detail for more than a decade. 1, 2 Figure 1(a) shows that the unit cell of single-crystal InGaZnO 4 is hexagonal in the a-b plane, and has a layered structure, including three InO 2 (In:OD1:2) layers with a compositional ratio of In:OD1:2 and six (Ga,Zn)O layers with a compositional ratio of Ga:Zn:OD0.5:0.5:1 along the c-axis. So far, amorphous IGZO has been mainly investigated as a TFT channel material. However, reliability issues such as degradation under bias temperature stress have not been solved sufficiently. And from an industrial point of view, device reliability is one of the most important factors.We have successfully fabricated a highly crystalline IGZO thin film with c-axis alignment, which we call a c-axis aligned crystal (CAAC) film. 3 We found that CAAC IGZOTFTs have high reliability 4 and low off-state leakage current at the yA/ m (10 24 A/ m) level. 5 We have applied them to low-power-consumption displays. [6][7][8][9] We also have applied CAAC IGZO-TFTs to non-displays using extremely low off-state current such as in non-volatile oxide semiconductor RAM (NOSRAM), 10 a normally-off processor, 11 and an image sensor 12 as novel applications of an oxide semiconductor. Figure 1. (a)

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New crystalline structure yields reliable thin-film transistors

Yamazaki¹

2012

SPIE Newsroom

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“…16 The optical distance between the anode and cathode was optimized by adjusting the thickness of the transparent electrode such that the light intensity of each color was increased, and color filters were used to enable the emission of RGBY.…”

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High-resolution OLED display with remarkably low power consumption using blue/yellow tandem structure and RGBY subpixels

Yamaoka

Sasaki

Kataishi

et al. 2015

Jnl Soc Info Display

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“…The flexible AMOLED display of our previous report is a bottom emission type, while the display of this report is a top emission type. The top emission type was employed because higher aperture ratio can be achieved and a correction circuit can be placed under the pixels . For further improvement of reliability and performance, the top emission type is suitable.…”

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confidence: 99%

“…The top emission type was employed because higher aperture ratio can be achieved and a correction circuit can be placed under the pixels. 8 For further improvement of reliability and performance, the top emission type is suitable.…”

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Flexible high‐resolution full‐color top‐emitting active‐matrix organic light‐emitting diode display

et al. 2013

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We developed a high‐performance 3.4‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display with remarkably high resolution using an oxide semiconductor in a backplane, by applying our transfer technology that utilizes metal separation layers. Using this panel, we also fabricated a prototype of a side‐roll display for mobile uses. In these AMOLED displays, a white OLED combined with a color filter was used in order to achieve remarkably high resolution. For the white OLED, a tandem structure in which a phosphorescent emission unit and a fluorescent emission unit are serially connected with an intermediate layer sandwiched between the emission units was employed. Furthermore, revolutionary technologies that enable a reduction in power consumption in both the phosphorescent and fluorescent emission units were introduced to the white tandem OLED.

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49.4: High‐definition Top‐emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

Cited by 35 publications

References 18 publications

New crystalline structure yields reliable thin-film transistors

New crystalline structure yields reliable thin-film transistors

High-resolution OLED display with remarkably low power consumption using blue/yellow tandem structure and RGBY subpixels

Flexible high‐resolution full‐color top‐emitting active‐matrix organic light‐emitting diode display

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