4H-SiC Drift Step Recovery Diode with Super Junction for Hard Recovery

Abstract

Silicon carbide (SiC) drift step recovery diode (DSRD) is a kind of opening-type pulsed power device with wide bandgap material. The super junction (SJ) structure is introduced in the SiC DSRD for the first time in this paper, in order to increase the hardness of the recovery process, and improve the blocking capability at the same time. The device model of the SJ SiC DSRD is established and its breakdown principle is verified. The effects of various structure parameters including the concentration, the thickness, and the width of the SJ layer on the electrical characteristics of the SJ SiC DSRD are discussed. The characteristics of the SJ SiC DSRD and the conventional SiC DSRD are compared. The results show that the breakdown voltage of the SJ SiC DSRD is 28% higher than that of the conventional SiC DSRD, and the dv/dt output by the circuit based on SJ SiC DSRD is 31% higher than that of conventional SiC DSRD. It is verified that the SJ SiC DSRD can achieve higher voltage, higher cut-off current and harder recovery characteristics than the conventional SiC DSRD, so as to output a higher dv/dt voltage on the load.

Special Issue: Silicon Carbide: From Fundamentals to Applications

“…Below, we provide a brief summary of the works included in the collection. Three of the total seven articles [1][2][3] are devoted to the technology of creating electronic devices based on silicon carbide single crystals. So, in Reference [1], a comparative study of the electrical and thermal parameters of three commercial Schottky diodes 1200 V/5 A MPS (Merged PiN Schottky) made on 4H-SiC was carried out.…”

“…The authors of Reference [3] present a new development of a step-recovery diode (DSRD) based on 4H-SiC. This diode is a kind of open-type pulse diode based on widebandgap material.…”