4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Lukin, Daniil M.; Dory, Constantin; Guidry, Melissa A.; Yang, Ki Youl; Mishra, Sattwik Deb; Trivedi, Rahul; Radulaski, Marina; Sun, Shuo; Vercruysse, Dries; Ahn, Geun Ho; Vučković, Jelena

doi:10.1038/s41566-019-0556-6

Cited by 378 publications

(296 citation statements)

References 42 publications

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“…Si color center in 4H-SiC (abbreviated V Si henceforth), and find the V Si to satisfy these requirements. The V Si is a color center with promise for quantum information processing technologies due to its long spin coherence time 35 , unique 3/2 spin system 36,37 , and compatibility with scalable photonic architectures 38 . The V Si spectrum comprises two optical transitions, which are separated by 1 GHz via spin-spin coupling (corresponding to spin ±1/2 and ±3/2 sublevels).…”

Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 99%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.

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Section: Continuous-wave Scattering Off a Modulated Two-level Systemmentioning

confidence: 99%

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

et al. 2020

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“…We develop an alternative etch recipe to that based on XeF 2 (conventional) due to the availability of process gases and compatibility with standard ICP-RIE chambers. Specifically we use a combination of SF 6 and H 2 in the chamber at high pressure with zero RF bias ( Fig. 1(i)).…”

Section: Fabrication Methodsmentioning

confidence: 99%

“…Cubic silicon carbide (3C-SiC) has been gaining momentum as a platform to realize many optical functionalities due to its diverse properties. For example, the large second order ( χ2) susceptibility of 34 pm/V [3] and high third order non-linearity ( χ3) [4,5] allows for electro-optic applications and efficient non-linear optical frequency conversion [6]. SiC is a CMOS compatible material [7,8] with several favorable properties such as a wide band-gap [9], absence of two photon absorption at telecom wavelengths [10], high chemical resistance in harsh environments [11], high optical power handling [12], low thermo-optic coefficient [13], high thermal conductivity and large Young's modulus of 450 GPa [14].…”

Section: Introductionmentioning

confidence: 99%

“…SiC is a CMOS compatible material [7,8] with several favorable properties such as a wide band-gap [9], absence of two photon absorption at telecom wavelengths [10], high chemical resistance in harsh environments [11], high optical power handling [12], low thermo-optic coefficient [13], high thermal conductivity and large Young's modulus of 450 GPa [14]. Moreover, various polytypes of SiC are efficient quantum emitters both optically pumped and electrically driven in visible and telecom wavelengths [6,[15][16][17][18][19][20], making SiC ideal for a wide range of applications in integrated optics. Within this frame, 3C-SiC is the only one that can be grown on a host substrate (Si) with the option to grow SiC to an exact thickness required for the targeted application, which features the advantage of scalability and compatibility with electronic devices [21].…”

Section: Introductionmentioning

confidence: 99%

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High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

Powell¹,

Shams-Ansari²,

Desai³

et al. 2020

Opt. Express

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We fabricate suspended single-mode optical waveguides and ring resonators in 3C silicon carbide (SiC) that operate at telecommunication wavelength, and leverage post-fabrication thermal annealing to minimize optical propagation losses. Annealed optical resonators yield quality factors of over 41,000, which corresponds to a propagation loss of 7 dB/cm, and is a significant improvement over the 24 dB/cm in the case of the non-annealed chip. This improvement is attributed to the enhancement of SiC crystallinity and a significant reduction of waveguide surface roughness, from 2.4 nm to below 1.7 nm. The latter is attributed to surface layer oxide growth during the annealing step. We confirm that the thermo-optic coefficient, an important parameter governing high-power and temperature-dependent performance of SiC, does not vary with annealing and is comparable to that of bulk SiC. Our annealing-based approach, which is especially suitable for suspended structures, offers a straightforward way to realize high-performance 3C-SiC integrated circuits.

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“…Both 3C and 4H SiC can be achieved on insulator (SiCOI), based on direct wafer bonding rather than smart cut techniques and thinning of the material, methods now developed at the wafer-scale level. Recent experiments on wafer bonding of 3C on Insulator have provided microdisks with Q=143 000 [138], while in 4H integrated circuits such as micro-ring resonators [168] with a Q=73 000, photonic crystal nanocavities [182] with Q=630 000, and photonics waveguides [183]. Direct wafer bonding holds the promises to improve the final Q and optical quality of the resonators and be able to provide an integrated platform for nonlinear photonics and integrated quantum circuits in SiC.…”

Section: Nanophotonicsmentioning

confidence: 99%

Silicon carbide color centers for quantum applications

2020

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Silicon carbide has recently surged as an alternative material for scalable and integrated quantum photonics, as it is a host for naturally occurring color centers within its bandgap, emitting from the UV to the IR even at telecom wavelength. Some of these color centers have been proved to be characterized by quantum properties associated with their single-photon emission and their coherent spin state control, which make them ideal for quantum technology, such as quantum communication, computation, quantum sensing, metrology and can constitute the elements of future quantum networks. Due to its outstanding electrical, mechanical, and optical properties which extend to optical nonlinear properties, silicon carbide can also supply a more amenable platform for photonics devices with respect to other wide bandgap semiconductors, being already an unsurpassed material for high power microelectronics. In this review, we will summarize the current findings on this material color centers quantum properties such as quantum emission via optical and electrical excitation, optical spin polarization and coherent spin control and manipulation. Their fabrication methods are also summarized, showing the need for on-demand and nanometric control of the color centers fabrication location in the material. Their current applications in single-photon sources, quantum sensing of strain, magnetic and electric fields, spin-photon interface are also described. Finally, the efforts in the integration of these color centers in photonics devices and their fabrication challenges are described.proved to host these types of color centers, we can now determine that the material has approached the quality needed for quantum applications development.The first bulk material studied for applications in quantum technology is diamond. It was possible to isolate single color centers and determine their role for application in quantum technologies. As an example, the nitrogen-vacancy (NV) center [10], hosted by the diamond matrix, has become the leading color center in applications such as quantum sensing [11], which is a more achievable application on the road map towards quantum networks. Further, other color centers such as the Germanium vacancy (GeV) [12] and the siliconvacancy (SiV) [13] in diamond proved to have an enormous potential for quantum optical spin-photon interface due to their narrow bandwidth emission [14]. The wide bandgap of the diamond, together with its weak spinorbit coupling and diluted nuclear-spin bath, gives to diamond color centers a remarkable spin coherence, and isotope engineering can enhance it further, due to the possibility of growing highly pure samples [15]. SiC also enjoys most of these properties, and benefits from mature production protocols on a large scale which are available for silicon, excellent nanofabrication quality [16], and capability of ion implantation without the side effects typical of the diamond, such as graphitization during irradiation [17]. However, diamond has some limitations in this respect in...

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4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics

Cited by 378 publications

References 42 publications

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation

High-Q suspended optical resonators in 3C silicon carbide obtained by thermal annealing

Silicon carbide color centers for quantum applications

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