5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

Kim, Hyunchul; Park, Jong-Eun; Joe, In-Sung; Kwon, Doowon; Kim, Joo Hyoung; Dongsuk, Cho; Lee, Taehun; Lee, Changkyu; Park, Haeyong; Hong, Soojin; Chen, Chang; Kim, Jin-Gyun; Lim, H.; Oh, Youngsun; Kim, Yitae; Nah, Seungjoo; Jung, Seungmin; Lee, Jaekyu; Ahn, Jin-Hyun; Hong, Hyeongsun; Lee, Kyu Pil; Kang, Ho-Kyu

doi:10.1109/isscc19947.2020.9062924

Cited by 27 publications

(19 citation statements)

References 4 publications

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“…This technique primarily belongs to the field of computer vision, where mainly optical sensors such as an RGB camera and light detection and ranging (LiDAR) are employed [ 1 , 2 , 3 ]. Therefore, the optical sensors dominate the field, owing to the very high spatial resolution available in the range of μm [ 4 ] at the optical spectrum. However, the optical sensors are limited in terms of penetration depth and highly dependent on environmental conditions such as daylight and weather.…”

Section: Introductionmentioning

confidence: 99%

Object Recognition in High-Resolution Indoor THz SAR Mapped Environment

Batra

Sheikh

Khaliel

et al. 2022

Sensors

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Synthetic aperture radar (SAR) at the terahertz (THz) spectrum has emerging short-range applications. In comparison to the microwave spectrum, the THz spectrum is limited in propagation range but benefits from high spatial resolution. The THz SAR is of significant interest for several applications which necessitate the mapping of indoor environments to support various endeavors such as rescue missions, map-assisted wireless communications, and household robotics. This paper addresses the augmentation of the high-resolution indoor mapped environment for object recognition, which includes detection, localization, and classification. Indoor object recognition is currently dominated by the usage of optical and infrared (IR) systems. However, it is not widely explored by radar technologies due to the limited spatial resolution at the most commonly used microwave frequencies. However, the THz spectrum provides a new paradigm of possible adaptation of object recognition in the radar domain by providing image quality in good compliance to optical/IR systems. In this paper, a multi-object indoor environment is foremost mapped at the THz spectrum ranging from 325 to 500 GHz in order to investigate the imaging in highly scattered environments and accordingly create a foundation for detection, localization, and classification. Furthermore, the extraction and clustering of features of the mapped environment are conducted for object detection and localization. Finally, the classification of detected objects is addressed with a supervised machine learning-based support vector machine (SVM) model.

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Section: Introductionmentioning

confidence: 99%

Object Recognition in High-Resolution Indoor THz SAR Mapped Environment

Batra

Sheikh

Khaliel

et al. 2022

Sensors

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“…Active elements in modern integrated electronic circuits have reached sizes of only a few tens of nanometers [1], thanks to the short de Broglie wavelength of the conduction electrons. Optical elements, on the other hand, are limited by diffraction effects, leading to much larger device sizes typically beyond the scale of the photon wavelength [4,11]. Yet it is desirable to integrate electronic and photonic elements, since light is widely employed as signal carrier in modern telecommunication applications [20].…”

Section: Introductionmentioning

confidence: 99%

“…However, shrinking photodetectors below the diffraction limit is not easily possible without loss in efficiency. First of all, reducing the thickness of the detector leads to decreasing light absorption in its active material [11]. This especially applies for silicon, due to its indirect bandgap, but also to other materials, like few-layer transition-metal dichalcogenides, which are promising for modern photonic applications and narrow-band photodetectors, due to their comparatively strong absorption at their exciton transition energies [27,19].…”

Section: Introductionmentioning

confidence: 99%

Tunable nano-plasmonic photodetectors

Pertsch,

Kullock,

Gabriel

et al. 2022

Preprint

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Visible and infrared photons can be detected with a broadband response via the internal photoeffect. By using plasmonic nanostructures, i.e. nanoantennas, wavelength selectivity can be introduced to such detectors through geometry-dependent resonances. Also, additional functionality, like electronic responsivity switching and polarization detection have been realized. However, previous devices consisted of large arrays of nanostructures to achieve detectable photocurrents.Here we show that this concept can be scaled down to a single antenna level, resulting in detector dimensions well below the resonance wavelength of the device. Our design consists of a single electrically-connected plasmonic nanoantenna covered with a wide-bandgap semiconductor allowing broadband photodetection in the VIS/NIR via injection of hot carriers. We demonstrate electrical switching of the color sensitivity as well as polarization detection. Our results hold promise for the realization of ultra small, highly integratable photodetectors with advanced functionality.

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“…Within the More than Moore context, 3D CMOS Image Sensors enable the possibility of smarter and more advanced sensors through the co-integration of different blocks (Analog, Digital, RF) in various tiers. Although 3D stacking technologies have been used for 3D CIS [1], [2], constraints of traditional 3D stacking alignment capabilities forbid the more aggressive pixel miniaturization required for future generations of CIS [3], [4]. This drawback can be overcome by using 3D sequential integration (3DSI -also named 3D monolithic integration or 3D VLSI), an emerging technology where the stacked tiers are fabricated sequentially on top of each other [5].…”

Section: Introductionmentioning

confidence: 99%

Inter-tier Coupling Analysis in Back-illuminated Monolithic 3DSI Image Sensor Pixels

Sideris

Peizerat

Batude

et al. 2021

2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST)

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This study investigates the inter-tier coupling, for a Back-Side Illuminated (BSI) 4-Transistor (4T) pixel with its diode and Transfer Gate on the bottom tier and the rest of its circuitry on the top tier of a 3D Sequential Integration (3DSI) process. Variations due to coupling are compared with variations due to temperature, showing that both effects may result in a readout error of the same order of magnitude for the top-tier readout circuit. Nevertheless, we demonstrate that in a typical rolling readout, the sequence of the pixel control signals makes the coupling effect nearly negligible. As a result, we suggest that the fabrication of an inter-tier ground plane for electrical isolation is not strictly necessary for Monolithic 3D pixels when the readout top tier is directly stacked on the photodiode bottom tier.

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5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

Cited by 27 publications

References 4 publications

Object Recognition in High-Resolution Indoor THz SAR Mapped Environment

Object Recognition in High-Resolution Indoor THz SAR Mapped Environment

Tunable nano-plasmonic photodetectors

Inter-tier Coupling Analysis in Back-illuminated Monolithic 3DSI Image Sensor Pixels

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