2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers 2015
DOI: 10.1109/isscc.2015.7062945
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5.7 A 29nW bandgap reference circuit

Abstract: Bandgap references (BGRs) are widely used to generate a temperatureinsensitive reference voltage determined by the silicon bandgap. The BGR generally utilizes PN diodes to generate both of proportional-to-absolutetemperature (PTAT) and complementary-to-absolute-temperature (CTAT) quantities and combines them to eliminate the temperature dependency. Though the BGR provides a robust voltage or current reference with insensitivity to process, voltage and temperature variations that is superior to CMOS-only refere… Show more

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Cited by 59 publications
(23 citation statements)
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“…However, many approaches have been introduced using the BGR concept to maintain sub-1V Operation [3]. Bandgap references (BGRs) are widely used for generating a temperature-insensitive reference voltage determined by the bandgap of silicon [5]- [6]. The BGR typically uses PN diodes to produce both proportional-toabsolute (PTAT) and complementary-to-absolute (CTAT) temperature.…”
Section: Introductionmentioning
confidence: 99%
“…However, many approaches have been introduced using the BGR concept to maintain sub-1V Operation [3]. Bandgap references (BGRs) are widely used for generating a temperature-insensitive reference voltage determined by the bandgap of silicon [5]- [6]. The BGR typically uses PN diodes to produce both proportional-toabsolute (PTAT) and complementary-to-absolute (CTAT) temperature.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10][11] are all able to achieve a TC < 100 ppm/ • C but consume from 35 µW to 0.648 mW, which is far too much power for our RAMP system. Other above-1 V voltage reference circuits have been able to simultaneously maintain a low TC and power consumption less than 10 µW by using devices that are not available in standard CMOS processes, such as anti-doped NMOS devices [12], native NMOS devices [13], and NPN transistors [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions. 1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions.…”
Section: Introductionmentioning
confidence: 99%
“…Over the past decades, low-voltage reference generators have received much attention due to the growing interest in extremely low-power applications such as self-powered sensors. 1 Although several low-voltage low power reference circuits have recently been presented in [2][3][4][5][6][7][8][9][10][11][12][13] , it is difficult to cover all of the key properties of a voltage reference, such as the temperature coefficient (TC), power supply ripple rejection (PSRR), and power and area consumptions. For examples, the PSRR at 10 kHz frequency is only −18 dB in 2 , which is hard to meet the specifications in the system with high-frequency noises.…”
Section: Introductionmentioning
confidence: 99%