50 GHz InGaAs edge-coupled
            <i>pin</i>
            photodetector

Wake, D.; Spooner, Thomas; Perrin, S.D.; Henning, I.D.

doi:10.1049/el:19910666

Cited by 59 publications

(8 citation statements)

References 2 publications

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“…The triangles circled in the middle of Fig. 1 are for WGPD's employing the double-core multimode waveguide structure [14]- [18]. These WGPD's have a bandwidth-efficiency product of around 20 GHz, and one can see that this was the first breakthrough for the WGPD.…”

Section: B Wgpdmentioning

confidence: 99%

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Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

323

127

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The two main trends in the progress of ultrawideband/high-frequency photodetectors (PD's), improving the bandwidth-efficiency product and obtaining a high saturation current, are reviewed. With respect to achieving large bandwidthefficiency, the limiting factors and potentials of edge-coupled (waveguide, waveguide-fed, traveling-wave, periodic-travelingwave), resonant-cavity, and refracting-facet photodiodes, as well as the avalanche photodiode are discussed. Regarding high-saturation current, the author estimated how much the space-charge effect limits the saturation current and two ways to reduce the space-charge effect are outlined. One way is to distribute the photocarriers along the edge-coupled PD's and the other is to increase the carrier velocity using a uni-traveling carrier structure. The waveguide-photodiode-based technologies that we have developed are also presented; namely the design and fabrication of a 100-GHz waveguide photodiode (WGPD), uni-traveling carrier WGPD, 60-GHz packaging, and a 20-GHz large-core WGPD for the planar lightwave circuit integration. A 50-Gb/s receiver opto-electronic integrated circuit technology based on the WGPD is also presented.

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Section: B Wgpdmentioning

confidence: 99%

“…To achieve this, double-core multimode waveguide structures were proposed in 1991 [13], [14] (see Section IV). The double-core consists of transparent doped intermediate bandgap layers are set above and/or below the photoabsorption layer.…”

Section: B Wgpdmentioning

confidence: 99%

Ultrawide-band/high-frequency photodetectors

Kato

1999

IEEE Trans. Microwave Theory Techn.

323

127

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“…The proposed module uses a broadband edge-coupled photodiode supplied by BT Laboratories [9] and a broadband MVIC (HMMC 5040) amplifier from Hewlett Packard, interconnected through a microstrip impedance matching circuit. The impedance matching circuit design is kept simple.…”

Section: Theory and Designmentioning

confidence: 99%

High Performance Optical Receiver Using a PIN Photodiode and Amplifier for Operation in the Millimeter-wave Region

Gomez-Rojas

Gomes

Wang

et al. 2000

2000 30th European Microwave Conference

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“…A general survey of literature [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] and references therein reveals the amount of effort spent on the modeling, fabrication and characterization of InGaAs based p-i-n photodetectors by several research groups. Photodetector based on III-V materials are most suitable for application in optical fiber communication system operating in the near infrared region.…”

Section: Introductionmentioning

confidence: 99%