50 mm diameter Sn-doped (0 0 1) β-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air

Hoshikawa, Keigo; Kobayashi, Takumi; Ohba, Etsuko

doi:10.1016/j.jcrysgro.2020.125778

Cited by 80 publications

(34 citation statements)

References 29 publications

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“…β-Ga 2 O 3 bulk single crystals have been synthesized by various melt growth methods illustrated in Fig. 3, such as floating zone [34,35], Czochralski (CZ) [36,37], vertical Bridgman [38], and edge-defined film-fed growth (EFG) [35,39]. Si or Sn is usually used as a donor dopant to control n, and semi-insulating Ga 2 O 3 bulks are producible through compensation of residual donors with Fe or Mg doping.…”

Section: Melt Bulk Growthmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

123

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Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.

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Section: Melt Bulk Growthmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

123

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“…Additionally, this crucible also facilitates the pulling-up process as the grown crystal does not adhere to the wall. The major residual impurities are generally Rh (~several tens wt.ppm) from the crucible, Sn and Si (~several wt.ppm) from raw materials, and Fe and Zr (~several wt.ppm) from the furnace [ 36 , 48 ].This technique recently became n -type doping available by using a resistance heating VB furnace, and electron concentration and electron mobility were determined to be 3.6 × 10 18 cm −3 and 60 cm 2 V −1 s −1 , respectively, by 0.1 mol% Sn-doped [ 35 , 48 ]. As the CZ, EFG, and VB method use the crucible, they all have a high level of scalability.…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

et al. 2022

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

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“…There have been many reports on its bulk synthesis by various melt growth methods such as Verneuil, [ 23 ] floating zone, [ 24,25 ] Czochralski (CZ), [ 26,27 ] edge‐defined film‐fed growth (EFG), [ 25,28 ] and Bridgman. [ 29 ] Now,

{Ga}_{2} {normalO}_{3}

wafers produced from CZ and EFG bulks are commercially available. The size of the wafers produced from CZ bulks remains to be up to 2 in.…”

Section: Bulk Melt Growth Of β-Ga2normalo3mentioning

confidence: 99%

β‐Gallium Oxide Devices: Progress and Outlook

Higashiwaki

2021

Physica Rapid Research Ltrs

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Beta‐gallium oxide (β-Ga2normalO3) has a history of research and development for over 70 years; however, it has attracted little attention as a semiconductor material for a long time. The situation has drastically changed in the past decade, and research on its material properties and developments of growth and device technologies has become active worldwide, mainly from expectations for applications to next‐generation power devices. Most of the specific material properties are attributed to its extremely large bandgap energy of 4.5 eV. The other important material feature is that large‐size single‐crystal bulks can be synthesized by melt growth methods. Herein, after introducing the material properties of β-Ga2normalO3 that are important for electronic devices, the current status of bulk melt growth and epitaxial thin‐film growth technologies is given. State‐of‐the‐art β-Ga2normalO3 diodes and transistors are also discussed, including future prospects.

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50 mm diameter Sn-doped (0 0 1) β-Ga2O3 crystal growth using the vertical Bridgeman technique in ambient air

Cited by 80 publications

References 29 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

β‐Gallium Oxide Devices: Progress and Outlook

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