50-W LTCC Transmitter Utilizing 28-V GaAs With Integrated High-Speed Pulse Modulation

Rodenbeck, Christopher T.; Knudson, Richard T.; Sandoval, Charles E.; Peterson, K.; Pankonin, Jeffrey; Eye, Robert; Allen, D.L.; Brehm, G.; Binney, R.; Smith, Frank; Dimsdle, Jeffrey W.

doi:10.1109/lmwc.2009.2032025

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Cited by 4 publications

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“…Specifically, in HBTs the voltage swing can be as high as BVCBO as opposed to BVCEO that sets the limit in linear amplifiers [5]. Finally, pulsed systems such as short-time (ultra-) wideband power amplifiers (UWB-PA) provide essential advantages over continuous wave (CW) PAs in terms of size, weight, and power dissipation for a given output power requirement [6]. These systems can be found in the fields of high-resolution imaging and sensing, precision position location, and wireless networking [7].…”

Section: Introductionmentioning

confidence: 99%

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance

Fregonèse

Mukherjee

Rücker

et al. 2021

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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This paper examines the performance of SiGe HBTs under DC and AC pulsed operating conditions beyond the breakdown voltage. Two state-of-the-art technologies are investigated. The limitations when biasing the transistor at or beyond peak fT are thermal only, thus penalizing deep trench architectures. Furthermore, the reliability implications are explored and their impact on device degradation is assessed.

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Section: Introductionmentioning

confidence: 99%