2013
DOI: 10.1109/temc.2013.2265049
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Electrooptic Inspection of Vector Leakage in Radiofrequency Multichip Modules

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Cited by 3 publications
(2 citation statements)
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“…Recently, electro-optic (EO) measurement methods have been used to measure the vector E-fields within these devices [5], [9]. This measurement technique relies on the E-field induced laser light polarization change in a birefringent dielectric material, known as Pockels effect.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, electro-optic (EO) measurement methods have been used to measure the vector E-fields within these devices [5], [9]. This measurement technique relies on the E-field induced laser light polarization change in a birefringent dielectric material, known as Pockels effect.…”
Section: Introductionmentioning
confidence: 99%
“…The spatial resolution of the measurement technique is dependent on the laser beam spot size which can be as small as 0.5 µm [11]. The use of ultra-fast lasers combined with the temporal resolution of EO crystals allow measurements up to THz frequencies [12] using both internal [13]- [15] and external [16], [17] electro-optic sampling (EOS) techniques. The internal EOS technique relies upon the device substrate acting as a birefringent material limiting its applicability to a narrow range of semiconductors, and excludes it from packaged device measurements.…”
Section: Introductionmentioning
confidence: 99%