530V Integrated gated diode switch for telecommunications

Hartman, A.R.; Berthold, Jörg; Riley, Thomas J.; Kohl, Jim; Wong, Y.H.; Weston, H.T.; Scott, Ron

doi:10.1109/iedm.1981.190055

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Semi-insulating silicon nitride (SinSiN) as a resistive field shield

Osenbach

Knolle

1990

IEEE Trans. Electron Devices

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We have developed plasma-deposited semi-inrulating rilicon nitride (SinSiN) as a reGstive sea passivation. In thir paper we briefly review itr properties, then we review how it can be used ar a resistive sea. Finally, we show that SinSiN can be used to improve the breakdown voltage of a high-voltage device by some 20 to 40 V by screening all surface charges. We further show that SinSiN provides device immunity to rurface charges, thereby improving yield and reliability.

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