Semi-insulating silicon nitride (SinSiN) as a resistive field shield

Osenbach, J.W.; Knolle, W. R.

doi:10.1109/16.106248

Cited by 20 publications

(12 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the situation is different for t OX > t OX(OPT) (Fig10(c)), when the breakdown occurs at the junction edge, the simulation results indicate that the breakdown voltage assumes almost the same value after Q F =4.0x10 11 /cm 2 for all the dielectric passivated structures. In fact, the V BD for the semi-insulator passivated structure also overlaps with that of the dielectric passivated structure after Q F =6.5x10 11 /cm 2 .…”

Section: Figure 11mentioning

confidence: 93%

“…For the sake of simplicity, it is assumed that all the trapped charges are located at the Si-SiO 2 interface. This typically results in an equivalent surface charge density (Q F ) of the order of 3x10 11 /cm 2 for the non-radiated detector with moderately good oxides, whereas the amount of trapped charge is expected to saturate at 1.0x10 12 /cm 2 , even under heavy irradiation condition, for the [111] Si orientation used in detector fabrication.…”

Section: Device Structure and Simulation Techniquementioning

confidence: 99%

“…This situation is strongly modified by the increase in surface charge. As the oxide charge is increased to ~6.5x10 11 /cm 2 and beyond, the field strength increases both at the junction and under the overhang edge. However, in the same region, i.e., t OX < t OX(OPT) , Fig.10(a) shows that the semi-insulator passivated structure remains totally insensitive to the surface charge for the same variation of Q F , thus showing its superiority over the dielectric passivated structure.…”

Section: Figure 11mentioning

confidence: 99%

“…Since its introduction, semi-insulators (SIPOS [7][8][9][10] and SinSIN [11]) have gained a lot of interest in view of their application as a surface passivation material for high-voltage Si devices.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors

Ranjan

Bhardwaj

Namrata

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semiinsulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction depth, metal-overhang width and fixed oxide charge on the junction breakdown voltage of these structures is extensively studied. The results presented in this work clearly demonstrate the superiority of the metal-overhang structure design employing semi-insulator passivated structures over dielectric passivated ones in realizing a given breakdown voltage.

show abstract

Section: Figure 11mentioning

confidence: 93%

Section: Device Structure and Simulation Techniquementioning

confidence: 99%

Section: Figure 11mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors

Ranjan

Bhardwaj

Namrata

et al. 2002

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

show abstract

“…For a-SiN:H deposition, however, no experimental studies of the surface reactions have been reported. Thus, with a view to understanding the properties of a-SiN:H film, we studied the surface reactions of the precursors in SiH 4 -NH 3 and SiH 4 -N 2 gas mixture plasma CVD. To study the surface reaction coefficient, we employed a step coverage method, in which the a-SiN:H film was deposited on a Si wafer with high-aspect-ratio trenches; we compared the film thickness profile on the trench with that obtained from a Monte Carlo simulation.…”

Section: Introductionmentioning

confidence: 99%

Effective sticking coefficient measurement of radicals for a‐SIN:H film growth in plasma CVD

Fujikake

Narita

Ichikawa

2006

Electrical Engineering Japan

View full text Add to dashboard Cite

SUMMARYThe reaction coefficients of radicals on the growing surface of hydrogenated amorphous silicon nitride (aSiN:H) were studied by applying Monte Carlo simulation. These a-SiN:H films were deposited on trench-patterned silicon wafers using two kinds of gas mixture, SiH 4 -NH 3 and SiH 4 -N 2 , and then measured for their film thickness profiles and composition on the trench wall. The derived total loss coefficient, β, of radicals was estimated from comparison between the experimental results and the simulation. On the basis of these results, the main radicals during depositions will be discussed.

show abstract

Performance Characteristics of Semi-Insulator- and Dielectric-Passivated Si Strip Detectors

Ranjan

Bhardwaj

Namrata

et al. 2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

The harsh radiation environment in present and future high-energy physics experiments, such as the Large Hadron Collider (LHC), is a driving force for the development of high-voltage Si strip detectors. It is well known that mobile surface ions can affect the stability and long-term behaviour of Si detectors. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric-passivated metal-overhang structures are compared under optimal conditions. Influence of the salient design parameters such as field oxide thickness, junction depth, metal-overhang width, and the surface charge on the breakdown performance of these structures are systematically analyzed, thus providing a comprehensive picture of the behaviour of metal-overhang structures and helping in the detector optimization task. The results presented in this paper clearly demonstrate the superiority of the metal-overhang structure design employing semi-insulator-passivated structures over dielectric-passivated ones in realizing a given breakdown voltage.

show abstract

Semi-insulating silicon nitride (SinSiN) as a resistive field shield

Cited by 20 publications

References 15 publications

Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors

Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors

Effective sticking coefficient measurement of radicals for a‐SIN:H film growth in plasma CVD

Performance Characteristics of Semi-Insulator- and Dielectric-Passivated Si Strip Detectors

Contact Info

Product

Resources

About