2017
DOI: 10.1109/jlt.2017.2650678
|View full text |Cite
|
Sign up to set email alerts
|

55 GHz Bandwidth Distributed Reflector Laser

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

2
51
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
5
2
1

Relationship

0
8

Authors

Journals

citations
Cited by 76 publications
(53 citation statements)
references
References 18 publications
2
51
0
Order By: Relevance
“…However, two-section laser diodes can also be useful in improving the modulation bandwidth. If beating happens between a main mode and a sufficiently weaker side mode, then the modulation bandwidth is enhanced at the beating frequency, as in [9]. The 3D-view and top-view of the laser structure are shown in Fig.…”
Section: Design and Fabricationmentioning
confidence: 99%
See 1 more Smart Citation
“…However, two-section laser diodes can also be useful in improving the modulation bandwidth. If beating happens between a main mode and a sufficiently weaker side mode, then the modulation bandwidth is enhanced at the beating frequency, as in [9]. The 3D-view and top-view of the laser structure are shown in Fig.…”
Section: Design and Fabricationmentioning
confidence: 99%
“…Simulations show that such designs can enhance the modulation bandwidth to values as high as 50 GHz due to the beating between the main mode and a closely-located side mode. An actual device utilizing this concept was fabricated and measured in [9], in which a monolithic InP DFB laser demonstrated a modulation speed of 112 Gbps. Here, the beating between the DBR and DFB modes, which are separated by 50 GHz, gives the modulation enhancement at 50 GHz.…”
Section: Introductionmentioning
confidence: 99%
“…For III-V-on-silicon devices, 56 Gbps NRZ-OOK electroabsorption modulation was demonstrated from both sides of the laser [2]. In [3], an InP distributed Bragg reflector (DBR) laser was used for the generation of 112 Gbps PAM-4. Furthermore, an InP-based double-side electroabsorption modulated DFB laser has been used for 2 x 56 Gbps PAM-4 [4].…”
Section: Introductionmentioning
confidence: 99%
“…For III-V-on-silicon devices, 25 Gbaud PAM-4 was demonstrated [2], and the same design was used for 100 Gbps EDB [5]. Although the bandwidth of direct modulation can be relatively high [3], modulation at high frequencies often comes with a large chirp. Electroabsorption modulation suffers less from this problem and its bandwidth is limited only by the RC-constant of the modulator.…”
Section: Introductionmentioning
confidence: 99%
“…The CW launch power should be kept as low as possible to minimise the equipment and operational costs. To realise this, reduction of P mod,loss has been demonstrated using direct modulation, but requires nonlinear Volterra equalisation 2,3 . Alternatively, externally modulated lasers have enabled receiver sensitivities as low as −7.1 dBm at a BER of 3.8 × 10 −3 , but typically incur a 10 dB modulation loss 4 .…”
Section: Introductionmentioning
confidence: 99%