56 Gb/s Germanium Waveguide Electro-Absorption Modulator

Srinivasan, Srinivasan Ashwyn; Pantouvaki, Marianna; Gupta, Shashank; Chen, Hong Tao; Verheyen, Peter; Lepage, Guy; Roelkens, Günther; Saraswat, Krishna C.; Thourhout, Dries Van; Absil, P.; Campenhout, Joris Van

doi:10.1109/jlt.2015.2478601

Cited by 149 publications

(68 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They can be compact and provide broadband operations but have limited thermal stability [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Si MachZehnder Modulator [6] Graphene-Si EAM [15] ~40x10 1500 3 >180 n/a 2.4 n/a n/a n/a n/a 1.2 n/a Graphene-Si EAM [22] 80 x80 1550 7.5 <0.1 n/a n/a 12.5 n/a n/a 800 30 22 * Assuming balanced Mach-Zehnder modulator with broadband 3dB splitters, # Mach-Zehnder bias control, § Bandwidth can be traded for temperature tolerance, ‡ The transmitter penalty is defined as TP=(P out (1)-P out (0))/(2×P in ) where P out (1) and P out (0) are the high and low level of output optical power from the modulator and P in is the input optical power [12].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

Self Cite

162

156

View full text Add to dashboard Cite

High performance integrated optical modulators are highly desired for future optical interconnects. The ultra-high bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 µm-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.

show abstract

“…They can be compact and provide broadband operations but have limited thermal stability [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

Self Cite

162

156

View full text Add to dashboard Cite

show abstract

“…The power consumption is given in energy-per-bit and estimated from E pb = C j V 2 s /4 = 53 fJ/bit [23], with a voltage swing of V s = 1.5 V. This is higher than 12.8 fJ/bit in [4]. The energy usage is proportional to the junction capacitance, and shortening the device would therefore lower energy usage at the cost of a lower ER.…”

Section: B Electrical Performancementioning

confidence: 99%

“…State-of-the-art 50 GHz Ge-Si EAMs [3], [4] based on the Franz-Keldysh effect demonstrate optical bandwidths of 10 − 20 nm. Silicon-based EAMs using Fermi-level variation in graphene show optical bandwidth in excess of 80 nm [5], but have low extinction ratio and limited modulation frequency due to high contact resistance to graphene.…”

Section: Introductionmentioning

confidence: 99%

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Engelen

Shen

Roelkens

et al. 2018

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at:openaccess@tue.nl providing details and we will investigate your claim. Abstract-We propose and evaluate by simulation a novel membrane electro-absorption modulator heterogeneously integrated on silicon. The device is based on the electronconcentration dependent absorption of highly-doped n-InGaAs. It is predicted that the modulator can be operated over a wavelength range of more than 100 nm and provides a static extinction ratio of 7.2 dB, an insertion loss of 4.4 dB, a modulation speed above 50 Gbit/s and a power consumption of 53 fJ/bit. The modulator has a small footprint of 0.4 × 80 um 2 (excluding contact pads) and operates on a CMOS compatible 1.5 V voltage swing.

show abstract

“…1,2 Among the basic building blocks, like waveguides, photodetectors, modulators and filters, needed for an optical link, the on-chip laser source is another key component. For on-chip laser source applications, Ge is a promising material as it can been easily grown on a Si platform as compared to III-V materials.…”

mentioning

confidence: 99%

Design Requirements for Group-IV Laser Based on Fully Strained Ge_1−xSn_xEmbedded in Partially Relaxed Si_1−y−zGe_ySn_zBuffer Layers

Shimura

Srinivasan

Loo

2016

ECS J. Solid State Sci. Technol.

Self Cite

View full text Add to dashboard Cite

Theoretical calculation using the model solid theory is performed to design the stack of a group-IV laser based on a fully strained Ge1−xSnx active layer grown on a strain relaxed Si1−y−zGeySnz buffer/barrier layer. The degree of strain relaxation is taken into account for the calculation for the first time. The transition between the indirect and the direct band material for the active Ge1−xSnx layer is calculated as function of Sn content and strain. The required Sn content in the buffer layer needed to apply the required strain in the active layer in order to obtain a direct bandgap material is calculated. Besides, the band offset between the (partly) strain relaxed Si1−y−zGeySnz buffer layer and the Ge1−xSnx pseudomorphically grown on it is calculated. We conclude that an 80% relaxed buffer layer needs to contain 13.8% Si and 14% Sn in order to provide sufficiently high band offsets with respect to the active Ge1−xSnx layer which contains at least 6% Sn in order to obtain a direct bandgap.

show abstract

56 Gb/s Germanium Waveguide Electro-Absorption Modulator

Cited by 149 publications

References 23 publications

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Design Requirements for Group-IV Laser Based on Fully Strained Ge_1−xSn_xEmbedded in Partially Relaxed Si_1−y−zGe_ySn_zBuffer Layers

Contact Info

Product

Resources

About

56 Gb/s Germanium Waveguide Electro-Absorption Modulator

Cited by 149 publications

References 23 publications

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

A Novel Broadband Electro-Absorption Modulator Based on Bandfilling in n-InGaAs: Design and Simulations

Design Requirements for Group-IV Laser Based on Fully Strained Ge1−xSnxEmbedded in Partially Relaxed Si1−y−zGeySnzBuffer Layers

Contact Info

Product

Resources

About

Design Requirements for Group-IV Laser Based on Fully Strained Ge_1−xSn_xEmbedded in Partially Relaxed Si_1−y−zGe_ySn_zBuffer Layers