57‐1: <i>Invited Paper:</i> Application of Rapid Thermal Annealing Process to the Display Technology

Park, Sang‐Hee Ko; Ji, Sanghyun; Jeong, Pilseong; Nam, Yunyong; Yang, Jong‐Heon; Hwang, Chi‐Sun

doi:10.1002/sdtp.12341

Symp Digest of Tech Papers

2018

DOI: 10.1002/sdtp.12341

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57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

Sang‐Hee Ko Park

Sanghyun Ji

Pilseong Jeong

et al.

Abstract: We report the effect of a rapid thermal annealing process (RTP) on the ion dopant activation process in LTPS TFT on PI substrate and on the electrical properties of Al-doped InZnSnO thin film transistor (TFT) with back-channel etched BCE structure.

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57‐1: Invited Paper: Application of Rapid Thermal Annealing Process to the Display Technology

Abstract: We report the effect of a rapid thermal annealing process (RTP) on the ion dopant activation process in LTPS TFT on PI substrate and on the electrical properties of Al-doped InZnSnO thin film transistor (TFT) with back-channel etched BCE structure.

Cited by 1 publication

References 5 publications

Performance Enhanced a-Si:H TFTs for 8K Display by Adopting Corrosion Barrier Layer

Performance Enhanced a-Si:H TFTs for 8K Display by Adopting Corrosion Barrier Layer

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