6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

Kim, Jihoon; Park, Hongjong; Lee, Sang-Ho; Kim, Jaeduk; Lee, Wangyong; Lee, Chang‐Hoon; Kwon, Youngwoo

doi:10.1049/el.2016.3524

Cited by 25 publications

(6 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 9a,b show the transistor equivalent circuits of the cascode mixer when the second positive feedback inductor (L p2 ) is added to the source-drain connection between M1 and M2. In a similar way as before, the Z 21 calculated through node analysis of the equivalent circuit in Figure 9b is In Equation (7), expressions related to L p2 are included in the denominator term. When L p2 is added, the 1 + s 2 L p2 C ds term becomes smaller and the magnitude of the denominator decreases, thereby increasing the magnitude of Z 21 and improving the power gain.…”

Section: Design Of Gate Line Inductance and Inductive Positive Feedba...mentioning

confidence: 99%

“…They are designed to absorb the gate/drain resistances and capacitances inside the transistors by arranging transistors in a row. Therefore, although the gain is relatively small compared with the number of transistors used due to inefficient transistor arrangement, it is possible to obtain a bandwidth of more than an octave band [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Wideband and Low-Power Distributed Cascode Mixer Using Inductive Feedback

Kim

2022

Sensors

Self Cite

View full text Add to dashboard Cite

A wideband and low-power distributed cascode mixer is implemented for future mobile communications. The distributed design inspired by the distributed amplifier (DA) enables a mixer to operate in a wide band. In addition, the cascode structure and inductive positive feedback design allow high conversion gain with low-power consumption. The proposed mixer is fabricated using a 130 nm commercial complementary metal-oxide-semiconductor (CMOS) process. It consists of three cascode gain cells and operates with a drain voltage of 1.5 V and a gate voltage of 0.5 to 0.7 V. The fabricated mixer exhibits conversion gain of −2.9 to 3.1 dB at the radio frequencies (RFs) of 4 to 30 GHz and −1.9 to 0.4 dB at RFs of 54 to 66 GHz under the conditions of 8 to 10 dBm of local oscillator (LO) power and 650 MHz of intermediate frequency (IF). The LO-RF isolation is more than 15 dB over the entire measurement band (0.2 to 67 GHz) as the RF and LO signals are applied to different transistors owing to the cascode structure. The total power consumption is only within 12 mW, and the chip size is 0.056 mm2, making it possible to implement a compact mixer. The proposed mixer shows broadband characteristics covering from ultra-wideband (UWB) and the 28 GHz fifth-generation (5G) communication band to the 60 GHz wireless gigabit alliance (WiGig) band.

show abstract

Section: Design Of Gate Line Inductance and Inductive Positive Feedba...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Wideband and Low-Power Distributed Cascode Mixer Using Inductive Feedback

Kim

2022

Sensors

Self Cite

View full text Add to dashboard Cite

show abstract

“…Gallium nitride (GaN) semiconductors have a high breakdown voltage due to inherent wide-bandgap and high current density, which is advantageous for use as power semiconductors [1,2]. In addition, since the high electron mobility transistor (HEMT) structure has high electron mobility due to the generation of its unique 2-D electron gas (2-DEG), GaN HEMTs have been widely studied and utilized in high-frequency power amplifiers [3][4][5][6][7]. Since GaN HEMTs exhibit high power density but have a self-heating effect, a source via structure that can dissipate heat well to substrates is widely used in transistor layouts.…”

Section: Introductionmentioning

confidence: 99%

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

Kim

2021

Applied Sciences

Self Cite

View full text Add to dashboard Cite

A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

show abstract

“…Due to these profound advantages, the GaN HEMT is used nowadays for the design of broadband high PA s as reported in Refs. .…”

Section: Introductionmentioning

confidence: 99%

A 1.8 GHz wideband high power amplifier with flat gain response by exploiting microstrip high‐pass‐filter

Malik

Sheta

Elshafiey

2018

Micro & Optical Tech Letters

View full text Add to dashboard Cite

A 1.8 GHz broadband high power amplifier (PA) with 144% fractional bandwidth is presented in this article. The proposed PA achieves a power added efficiency of 40%–56% for the entire band. To ensure flat gain response, a novel idea of integrating a microstrip high pass filter (HPF) in the input matching network is proposed. The incorporation of HPF reduces the unusual high gain at low frequency and thus results in a flat gain of 14.4 ±1 dB for the entire band. The matching circuits are realized on Taconic RF35 with dielectric constant of 3.5 and thickness of 0.76 mm. The high fractional bandwidth of the proposed PA makes it suitable to be used for the recent and future wireless communication systems.

show abstract

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

Cited by 25 publications

References 10 publications

A Wideband and Low-Power Distributed Cascode Mixer Using Inductive Feedback

A Wideband and Low-Power Distributed Cascode Mixer Using Inductive Feedback

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

A 1.8 GHz wideband high power amplifier with flat gain response by exploiting microstrip high‐pass‐filter

Contact Info

Product

Resources

About