A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

Kim, Ji-Hoon

doi:10.3390/app11199120

Cited by 2 publications

(1 citation statement)

References 26 publications

(34 reference statements)

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“…Although resistances are frequency independent, they are eventually bias dependent. The well-known equation for resistance extraction contains three basic equations constructed through Z-parameters with four unknown variables [8,27]. Hence, another equation or relationship is required to determine the values of the unknown parameters.…”

Section: Introductionmentioning

confidence: 99%

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

et al. 2023

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This paper presents a novel approach to the efficient extraction of parasitic resistances in high electron mobility transistors (HEMTs). The study reveals that the gate resistance value can be accurately determined under specific forward gate bias conditions (Vg = 1.0 V), although the gate resistance value becomes unreliable beyond this threshold (Vg > 1.0 V) due to potential damage to the Schottky contact. Furthermore, by examining the characteristics of the device under a cold-FET bias condition (Vds = 0 V), a linear correlation between the gate and drain current is identified, enabling an estimation of the interdependence between the drain and source resistance using the proposed method. The estimation of parasitic pad capacitance (Cpg and Cpd) from Dambrine’s model is refined by incorporating the depletion layer capacitance on the gate side during the pinch-off condition. To validate the accuracy of the extracted parasitic capacitance and resistance values obtained from the new method, small-signal modeling is performed on a diverse range of measured devices.

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Section: Introductionmentioning

confidence: 99%

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

et al. 2023

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Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

Kim,

Han,

Kim

et al. 2024

Electronics

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A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect. In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and electromagnetic (EM) simulation. Based on the results of load pull simulation and small-signal maximum stable gain (MSG) simulation, the GaN high-electron-mobility transistor (HEMT) size was selected to be 8 × 70 μm. However, since the source via model provided by the foundry was significantly different from the EM results, it was necessary to readjust the power matching considering this. Additionally, when selecting the source via size, the larger the size, the easier the matching, but since the layout of the peripheral bias circuit is not possible, a compromise was required considering the actual layout. To prevent in-band oscillation, an RC parallel circuit was added to the input matching circuit, and low-frequency oscillation was solved by adding a gate resistor on the PCB module. The proposed PA was fabricated with a commercial 0.1 μm GaN HEMT MMIC process. It exhibited 38.56 to 39.71 dBm output power (Pout), 14.2 to 16.7 dB linear gain, and 14.1% to 18.2% power-added efficiency (PAE) in the upper Ka band. The fabricated GaN power amplifier MMIC shows competitive Pout in the upper Ka band above 33 GHz.

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A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

Cited by 2 publications

References 26 publications

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors

Millimeter-Wave GaN High-Power Amplifier MMIC Design Guideline Considering a Source via Effect

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