6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

Kim, J.; Park, H.; Lee, S.; Kwon, Youngwoo

doi:10.1049/el.2015.3727

Cited by 20 publications

(3 citation statements)

References 9 publications

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“…Each NDA consists of eight gain cells to optimise the linear gain, bandwidth and output power. As mentioned in our previous work, unequal‐sized FETs are applied in the NDA to improve the output return loss and the power gain at a high frequency without drain line termination impedances [9]. The proposed NDA mostly uses 6 × 75 μm GaN high electron mobility transistors (HEMTs), but the last section has a 2 × 125 μm GaN HEMT.…”

Section: Circuit Designmentioning

confidence: 99%

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

et al. 2016

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A 6-18 GHz gallium nitride (GaN) non-uniform distributed amplifier (NDA) monolithic microwave integrated circuit with high power density is implemented with compact four-way combined power. The drain lines and gate lines are shared among the combined NDAs. Sharing drain (or gate) lines reduces the drain (or gate) line length by half, while keeping the same characteristic impedances and eliminates bulky and lossy power combiners, such as Wilkinson combiners. The proposed four-way NDA was fabricated using a commercial 0.25 μm GaN high electron mobility transistor (HEMT) process. It shows average continuous wave output power of 20.8 W and average associated gain of 10.7 dB from 6 to 18 GHz under 33 V drain bias. When pulsed input power and pulsed DC bias are simultaneously supplied to the NDA, the output power increases to 26 W, on average. To the best of the authors' knowledge, the highest RF power and power density among the reported GaN power amplifiers with an octave bandwidth higher than the Ku-band is represented in this work.

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Section: Circuit Designmentioning

confidence: 99%

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

et al. 2016

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“…Together with its unique characteristics, especially higher breakdown voltage and higher output power density, it has been proven to be an excellent candidate in high frequency applications [ 5 ]. Numerous circuit designs based on GaN processes with outstanding performance have sprung out these recent years [ 6 , 7 , 8 ]. The rapid development of GaN-based devices also stimulates the improvement of compact modeling, which serves as a key to practical circuit design [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

Mao

2018

Micromachines

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The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also been taken into consideration. AlGaN/GaN HEMTs with different gate width were utilized to validate the proposed model. Built on the proposed model, the effect brought by the I–V kink effect on large signal performance has been studied. Results show that the I–V kink effect will lead to the degradation of characteristics, including output power, gain, and power-added efficiency at the saturation region. Furthermore, the influence of the I–V kink effect was found to be related with the input power and the static bias point in this work. The time domain waveform and AC dynamic load line were used for validation of results based on simulation. The consequences of this paper will be useful for the optimization of practical circuit design.

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“…Green et al (2001) demonstrated the capability of a three-section cascade DA, which was able to deliver an output power of 6 W and a gain of 12 dB in a frequency range of 2-8 GHz. The distributed power amplifier (DPA) concept also has been explored in the monolithic microwave integrated circuit (MMIC) form where a 0.25-m m gallium nitride (GaN)-based DA is able to deliver 8.1 W output power and 6.1 dB average gain across 6-18 GHz (Kim et al, 2016). Broadband bidirectional DA by Shou et al exhibits small-signal gain of 14.4 dB from 1.6 to 23.6 GHz (Weng et al, 2016).…”

Section: Introductionmentioning

confidence: 99%

A high gain 10 watts wideband distributed power amplifier for two way radio system

Sangaran

Kumar

Rajendran

et al. 2018

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Purpose This paper aims to propose a practical design methodology of high-power wideband power amplifier. Design/methodology/approach The distributed power amplification method is used for a Gallium Nitride device to achieve wideband operation. To achieve the high power without trading-off the bandwidth and gain, a methodology to extract the package-loading effect is proposed and verified. Findings A maximum output power of 10 W is achieved from 100 MHz to 2 GHz with a wideband power gain of 32 dB in measurement. This performance is achieved through a single section matching network. Research limitations/implications Measurement accuracy is dependable to the thermal behaviour of the high-power device. Practical implications The proposed technique is an excellent solution to be used in the two way radio power amplifier that minimizes the fundamental trade-off issue between power, gain, bandwidth and efficiency. Originality/value In this work, a practical distributed power amplifier (DPA) design methodology is proposed that reduces the development cycle time for industrial engineers working on high-power circuit design application.

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6–18 GHz, 8.1 W size‐efficient GaN distributed amplifier MMIC

Cited by 20 publications

References 9 publications

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

6–18 GHz, 26 W GaN HEMT compact power‐combined non‐uniform distributed amplifier

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

A high gain 10 watts wideband distributed power amplifier for two way radio system

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