60 GHz On-Wafer Noise Parameter Measurements Using Cold-Source Method

On-wafer noise-parameter measurements at w -band

“…The measurement setup is based on the cold-source method [9], [10]. The improved technique, described in [2], is used. This technique corrects the effects of reflection-coefficient changes between the cold and hot states of the noise source and takes into account the losses of the passive network between the DUT and noise receiver.…”

“…Since the -parameters of the passive network A-B are known, the source reflection coefficient can be calculated. It is then possible to calculate the noise figure of the entire system as a function of the source reflection coefficient [2]…”

“…We have recently been working with noise-parameter measurements at -and -bands. Our -band (50-75 GHz) noise-parameter measurement setup and results were reported in [2]- [4] and the first results with an active device at -band were published in [7]. This paper presents a full report on the measurement system that allows simultaneous on-wafer noise and scattering parameter measurements at -band.…”