60 GHz sources using optically driven HBTs

Abstract

photodetectors integrated with planar twin-dipole antenna structures to generate 60 GHz radiation. Our initial efforts employed two cw lasers in a mixing configuration to demonstrate proof of principle. In subsequent experiments, a mode locked semiconductor laser was substituted for the mixing system to produce a compact and highly stable transit time device (mode locked laser) and a high Millimeter wave sources at 60 GHz have been demonstrated using optically driven heterojunction bipolar transistors configured as photodetectors. Two millimeter waves; the mixing of two cw lasers and were used to optically generate the radiation source [4,5]. This combination of an optical the mode locking Of a semiconductor laser' The speed phototransistor (HBT) defines a new type of optoelectronic millimeter wave source which can be wave power generated from these distributed to form novel coherent arrays. configurations was radiated into free-space using integrated planar twin dipole antennas and heterodyne detected with signal to noise ratios > 40 dB. As part of these experiments, the DC optical gain and quantum efficiency of the HBT photodetectors was determined.

Single-event dynamics of high-performance HBTs and GaAs MESFETs

“…On the basis of these results we can conclude that the sensitive area of the typical HBT of this study is a 12 pm x 20 pm rectangle centered on the emitter electrode and bounded by the base electrode. In addition, the positiondependent results suggest that the most sensitive node in these devices is the base-collector junction, in agreement with the conclusions of earlier workers [21]. It should be noted, however, that the emitter metal prevents direct excitation of the emitter-base junction by the laser pulse, so that a direct comparison with other earlier work [10,11] is not possible.…”