600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Seo, Deok Won; Choi, Hae-Wook; Twynam, J.K.; Kim, Kimin; Yim, J. S.; Moon, Sung-Woon; Jung, Sung-Dal; Lee, Jong-Sub; Roh, S. D.

doi:10.1109/led.2014.2304587

Cited by 18 publications

(12 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With floating substrate, the V BR at 1 lA/mm was À1450 V and À2000 V, and the hard breakdown was À1500 V and À2500 V for devices with L AC of 15 lm and 25lm, respectively, corresponding to a critical breakdown field of 1 MV/cm (extracted from the hard breakdown voltage versus L AC ). With grounded substrate, the V BR at 1 lA/mm for both L AC was about À1060 V, while the hard breakdown was up to À1200 V, which is comparable to current 650 V-rated GaNon-Si power transistors [18][19][20][21] and is limited by the vertical breakdown of the buffer layers. 22 These results indicate that the 15 lm-L AC SBDs can fulfill the voltage-blocking requirements of 600/650 V applications, even for those requiring grounded substrate connection, and the 25 lm-L AC SBDs can be used for 1200 V applications (with floating substrate connection 22 ) both providing a safety margin in breakdown of about 100% (from the rated voltage to the hard breakdown).…”

mentioning

confidence: 62%

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Matioli

2018

Applied Physics Letters

View full text Add to dashboard Cite

This letter reports lateral GaN-on-Si power Schottky barrier diodes (SBDs) with unprecedented voltage-blocking performance by integrating 3-dimensionally a hybrid of tri-anode and slanted trigate architectures in their anode. The hybrid tri-anode pins the voltage drop at the Schottky junction (V SCH), despite a large applied reverse bias, fixing the reverse leakage current (I R) of the SBD. Such architecture led to an ultra-low I R of 51 6 5.9 nA/mm at À1000 V, in addition to a small turnon voltage (V ON) of 0.61 6 0.03 V. The slanted tri-gate effectively distributes the electric field in OFF state, leading to a remarkably high breakdown voltage (V BR) of À2000 V at 1 lA/mm, constituting a significant breakthrough from existing technologies. The approach pursued in this work reduces the I R and increases the V BR without sacrificing the V ON , which provides a technology for high-voltage SBDs, and unveils the unique advantage of tri-gates for advanced power applications.

show abstract

mentioning

confidence: 62%

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

Matioli

2018

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Regarding traditional silicon complementary metal-oxide-semiconductor (CMOS) technology, NMOS (n-channel metal-oxide-semiconductor) is usually selected as the power device [7][8][9], which is mainly attributed to its high carrier mobility and desirable device area [10]. Additionally, third-generation semiconductor power devices with the characteristics of high speed and low on-resistance, such as GaN HEMTs (gallium nitride high-electron-mobility transistors) [11][12][13][14], are also dominated by N-type devices.…”

Section: Introductionmentioning

confidence: 99%

A Bootstrap Structure Directly Charged by BUS Voltage with Threshold-Based Digital Control for High-Speed Buck Converter

et al. 2021

View full text Add to dashboard Cite

This article proposes a high-frequency, area-efficient high-side bootstrap circuit with threshold-based digital control (TBDC) that is directly charged by BUS voltage (DCBV). In the circuit, the voltage of the bootstrap is directly obtained from the BUS voltage instead of the on-chip low dropout regulator (LDO), which is more suitable for a high operating frequency. An area-efficient threshold-based digital control structure is used to detect the bootstrap voltage, thereby effectively preventing bootstrap under-voltage or over-voltage that may result in insufficient driving capability, increased loss, or breakdown of the power device. The design and implementation of the circuit are based on CSMC 0.25 µm 60 V BCD technology, with an overall chip area of 1.4 × 1.3 mm2, of which the bootstrap area is 0.149 mm2 and the figure-of-merit (FOM) is 0.074. The experimental results suggest that the bootstrap circuit can normally operate at 5 MHz with a maximum buck converter efficiency of 83.6%. This work plays a vital role in promoting the development of a wide range of new products and new technologies, such as integrated power supplies, new energy vehicles, and data storage centers.

show abstract

“…4 Nowadays, the most commonly reported contacts stacks on Al x Ga 1−x N/GaN heterostructures contain elements with a low metal work function such as Ti, Ta or Al. 52,[6][7][8][9] . These contact stacks require a protective capping layer to prevent out-diffusion and undesired oxidation from the top of the contact stack 10 .…”

Section: Introductionmentioning

confidence: 99%

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures

Geenen

Constant

Solano

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

Wide-bandgap nitride semiconductors are currently in development for high-power electronic applications. Compositional layered heterostructures of such nitrides result in a high polarization field at the interface, enabling a higher electron mobility, a higher power density, and a higher conversion efficiency. Further optimization of such GaN-based high-electron-mobility transistors can be achieved by evolving from a top AlxGa1−xN barrier toward AlN or even InyAl1−yN. An ongoing challenge in using such hexagonal nitride semiconductors is the formation of a low-resistive, Au-free, ohmic contact far below 1Ωmm. In this paper, we investigate the formation of ohmic contacts by Ti–Al–TiN-based metalization as a function of different annealing temperatures (up to 950°C), Ti–Al ratios (from 15 up to 35 at. %) and nitride barrier composition (AlxGa1−xN, GaN, AlN, and InyAl1−yN). Contacts processed on AlxGa1–x/GaN, and AlN/GaN heterostructures result in low contact resistance of, respectively, 0.30 and 0.55Ωmm, whereas the same contact stack on InyAl1−yN results in resistance values of 1.7Ωmm. The observed solid-phase reaction of such Ti–Al–TiN stacks were found to be identical for all investigated barrier compositions (e.g., AlxGa1−xN , GaN, AlN, and InyAl1−yN), including the preferential grain alignment to the epitaxial nitride layer. The best performing ohmic contacts are formed when the bottom Ti-layer is totally consumed and when an epitaxially-aligned metal layer is present, either epitaxial Al (for a contact which is relatively Al-rich and annealed to a temperature below 660°C) or ternary Ti2AlN (for a relatively Ti-rich contact annealed up to 850°C). The observation that the solid-phase reaction is identical on all investigated nitrides suggests that a further decrease of the contact resistance will be largely dependent on an optimization of the nitride barriers themselves.

show abstract

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Cited by 18 publications

References 9 publications

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

A Bootstrap Structure Directly Charged by BUS Voltage with Threshold-Based Digital Control for High-Speed Buck Converter

Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures

Contact Info

Product

Resources

About