600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

Kikkawa, T.; Hosoda, Toru; Akiyama, Shin–ichi; Kotani, Yoshiyuki; Wakabayashi, T.; Ogino, Tsutomu; Imanishi, Kenji; Mochizuki, Akitoshi; Itabashi, K.; Shono, K.; Asai, Yasufumi; Joshin, K.; Ohki, Takao; Kanamura, Masahito; Nishimori, Masato; Imada, Tadahiro; Kotani, Junji; Yamada, Atsushi; Nakamura, Norikazu; Hirose, Takahisa; Watanabe, Keiji

doi:10.1109/wipda.2013.6695552

Cited by 6 publications

(4 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1) In addition, excellent power-switching performances with high-blocking voltages and low on-state resistances have been reported for AlGaN/ GaN high electron mobility transistors (HEMTs). [2][3][4][5][6][7] Continuous demand for improved device technology has made insulated-gate and surface-passivation structures inevitable for power switching transistors. In particular, the insulating gate dielectric plays an important role in blocking the leakage current when the gate is driven with a forward bias.…”

Section: Introductionmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This paper presents a systematic characterization of electronic states at insulators/(Al)GaN interfaces, particularly focusing on insulator/AlGaN/ GaN structures. First, we review important results reported for GaN metal-insulator-semiconductor (MIS) structures. SiO 2 is an attractive material for MIS transistor applications due to its large bandgap and high chemical stability. In-situ SiN x is effective for improving the operation stability of high electron mobility transistors (HEMTs). Meanwhile, Al 2 O 3 /GaN structures have high band offsets and low interface state densities, which are also desirable for insulated gate applications. We have proposed a calculation method for describing capacitance-voltage (C-V) characteristics of HEMT MIS structures for evaluating electronic state properties at the insulator/AlGaN interfaces. To evaluate near-midgap states at insulator/ AlGaN interfaces, a photo-assisted C-V technique using photon energies less than the bandgap of GaN has been developed. Using the calculation in conjunction with the photo-assisted C-V technique, we estimate interface state density distributions at the Al 2 O 3 /AlGaN interfaces.

show abstract

Section: Introductionmentioning

confidence: 99%

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Yatabe

Hori

et al. 2014

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The combination of excellent intrinsic properties such as high breakdown field strength, high electron carrier velocity, and high sheet carrier density has made GaN‐based high‐electron‐mobility transistors (HEMTs) primary candidates for realizing ultra‐low‐loss power switching devices . However, conventional AlGaN/GaN HEMTs with Schottky‐gates are normally‐on devices requiring a negative gate voltage to turn them off.…”

Section: Introductionmentioning

confidence: 99%

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Yatabe

Asubar

Sato

et al. 2014

Physica Status Solidi (a)

View full text Add to dashboard Cite

We have investigated the effects of the inductively coupled plasma (ICP) etching of AlGaN surface on the resulting interface properties of the Al 2 O 3 /AlGaN/GaN structures. The experimentally measured capacitancevoltage (C-V) characteristics were compared with those calculated taking into account the interface states density at the Al 2 O 3 /AlGaN interface. As a complementary method, photoassisted C-V method utilizing photons with energies less than the bandgap of GaN was also used to probe the interface state density located near AlGaN midgap. It was found that the ICP etching of the AlGaN surface significantly increased the interface state density at the Al 2 O 3 /AlGaN interface. It is likely that ICP etching induced the interface roughness, disorder of chemical bonds and formation of various type of defect complexes including nitrogen-vacancy-related defects at the AlGaN surface, leading to poor C-V curve due to higher interface state density at the Al 2 O 3 /AlGaN interface.

show abstract

“…1) Recent years have witnessed substantial progress in device performance, as evidenced by the realization of considerably low onresistances (R on ) and high breakdown voltages. [2][3][4][5][6][7] Before the full-scale implementation of these devices, however, problematic issuesin particular, the well-known current collapseshould be properly addressed.…”

mentioning

confidence: 99%

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Asubar

Sakaida

Yoshida

et al. 2015

Appl. Phys. Express

View full text Add to dashboard Cite

We studied the effects of pre-passivation oxygen plasma treatment of the AlGaN surface on the current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Oxygen plasma-treated devices generally exhibited significantly less dynamic on-resistance (Ron) compared with untreated control devices. We also extended our investigation to HEMTs with a GaN cap layer. Interestingly, after oxygen plasma treatment, we found that GaN-capped HEMTs showed a dynamic Ron behavior that was essentially similar to that of oxygen plasma-treated uncapped HEMTs, suggesting that the GaN cap layer plays an inconsequential role in current collapse mitigation when employed in conjunction with oxygen plasma treatment.

show abstract

600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

Cited by 6 publications

References 16 publications

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Contact Info

Product

Resources

About

600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications

Cited by 6 publications

References 16 publications

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Contact Info

Product

Resources

About

Interface trap states in Al₂O₃/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces