Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Asubar, Joel T.; Sakaida, Yoshiki; Yoshida, Shizuo; Yatabe, Zenji; Tokuda, Hirokuni; Hashizume, Tamotsu; Kuzuhara, Masaaki

doi:10.7567/apex.8.111001

Cited by 23 publications

(16 citation statements)

References 38 publications

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“…In addition, the on resistance, R on , of the devices can be obtained through the pulse‐IV curves, and the values of R on of the four samples were 6.1, 5.1, 6.08, and 7.4 mΩ mm, respectively. Ron of oxygen plasma treated devices had not significantly deteriorated . Therefore, devices with ICP based oxygen plasma treatment showed good switching characteristics …”

Section: Resultsmentioning

confidence: 95%

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Wang

et al. 2018

Physica Status Solidi (a)

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In this paper, the physical mechanism and trap effect of AlGaN/GaN high electron mobility transistor HEMT with inductively couple plasma (ICP) based oxygen plasma treatment are investigated. Three devices with different oxygen plasma treatment conditions are fabricated and compared to a conventional device. To understand the physical mechanism of oxygen plasma treatment by ICP, the chemical composition change of the barrier layer is studied through X-ray photoelectron spectroscopy (XPS) and transmission electron microscope (TEM), and the Al molar composition changes of the barrier layer after oxygen plasma treatment are numerically calculated. By numerical calculation of the polarization effect, it is found that an increase in time and RF power of the ICP increase the oxidation effect while the etching effect is decreased. Meanwhile, the trap effect of the devices that has treated with oxygen plasma treatment is also studied. In this study, the authors found that the greater the RF power is, the great the number of deeplevel trap states introduced by oxygen plasma treatment. However, the effect of oxygen plasma treatment on trap states is relatively limited, indicating that the trap density introduced by the ICP-based oxygen plasma treatment is low.

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Section: Resultsmentioning

confidence: 95%

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Wang

et al. 2018

Physica Status Solidi (a)

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“…It was suggested that using simultaneously two different approaches in mitigating current collapse did not necessarily guarantee a cumulative effect. 72) To put it explicitly, it was found that the GaN cap layer contributed no further reduction in current collapse in the devices already subjected to O 2 plasma treatment. Another report described a systematic investigation of the combined effect of O 2 plasma treatment and FP structure on current collapse.…”

Section: Effect Of Field Platementioning

confidence: 99%

“…[69][70][71] Recently, a significant reduction in current collapse has been demonstrated for O 2 plasma-treated AlGaN=GaN HEMTs as evidenced by highly reduced NDR in these devices over that of a reference device. 72) The AlGaN surface of the devices was exposed to O 2 plasma with an RF power of 100 W and an exposure time of 60 s. This was carried out prior to a SiN passivation step of the fabrication process shown in Fig. 1.…”

Section: Effect Of O 2 Plasma Treatment and Gan Capmentioning

confidence: 99%

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Kuzuhara

Asubar

Tokuda

2016

Jpn. J. Appl. Phys.

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115

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In this paper, we give an overview of the recent progress in GaN-based high-electron-mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics field. The comprehensive investigation of AlGaN/GaN HEMTs fabricated on a free-standing semi-insulating GaN substrate reveals that an extracted effective lateral breakdown field of approximately 1 MV/cm is likely limited by the premature device breakdown originating from the insufficient structural and electrical quality of GaN buffer layers and/or the GaN substrate itself. The effective lateral breakdown field is increased to 2 MV/cm by using a highly resistive GaN substrate achieved by heavy Fe doping. Various issues relevant to current collapse are also discussed in the latter half of this paper, where a more pronounced reduction in current collapse is achieved by combining two different schemes (i.e., a prepassivation oxygen plasma treatment and a field plate structure) for intensifying the mitigating effect against current collapse. Finally, a novel approach to suppress current collapse is presented by introducing a three-dimensional field plate (3DFP) in AlGaN/GaN HEMTs, and its possibility of realizing true collapse-free operation is described.

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“…For instance, we have found out that the GaN cap layer contributes no further reduction of current collapse in the devices already subjected to oxygen (O 2 ) plasma treatment. 28) It follows that careful consideration should be taken in choosing what schemes to combine for achieving reduced current collapse. In this work, we demonstrate for the first time highly suppressed current collapse in AlGaN=GaN high-electron-mobility transistors (HEMTs) by combined application of pre-passivation O 2 plasma treatment and FP structures.…”

Section: Introductionmentioning

confidence: 99%

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Asubar¹,

Yoshida²,

Tokuda³

et al. 2016

Jpn. J. Appl. Phys.

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We report on the highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) by combined application of prepassivation oxygen (O 2 ) plasma treatment and gate field plate (FP) structures schemes. Four different devices were fabricated in this work: (1) conventional HEMT as reference device, (2) field-plated HEMT, (3) O 2 plasma-treated HEMT, (4) both field-plated and O 2 plasma-treated HEMT. Analysis of dependence of normalized dynamic R on (NDR) on gate pulse on-time (t on ) revealed that gate-FP reduces the emission time constant (τ i ) of trapped electrons while O 2 -plasma treatment decreases the density of traps. For all measurement conditions, the device with both FP and O 2 plasma treatment exhibited the least NDR compared to devices with either FP or O 2 plasma treatment only, demonstrating for the first time the compatibility of both O 2 plasma treatment and FP schemes in mitigating current collapse.

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Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Cited by 23 publications

References 38 publications

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

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