600V trench-gate IGBT with Micro-P structure

Effect of Heat-Exchange Pin-Fin Structure Parameters on its Performance Characteristics

“…Use of the latest version "V-series" chip, which has already begun to be mass-produced for industrial applications, as the power chip provides an even greater effect. (1) Next, the design of a module that conforms to the usage conditions (battery voltage: 300 V, max. current (RMS value): 200 A, carrier frequency: 10 kHz) actually requested by customers was examined, and the results of evaluation of prototypes will be described below.…”

Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs

“…[1][2][3][4] While many power devices with wide bandgap materials, such as SiC, GaN, and Ga 2 O 3 , are being developed, [5][6][7][8][9] Si-IGBTs (insulated gate bipolar transistors) are still the main stream power switching devices and are making steady progress by various new technologies. [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] The recently proposed three-dimensional scaling concept is one of the effective ways to enhance the Si-IGBT performance. 25) In the scaling concept, similarly to the CMOS scaling, all the geometrical dimensions as well as gate voltage are scaled down proportionately while keeping the cell pitch W constant, as shown in Fig.…”