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Azhazha, V.M.; Кутний, В.Е.; Rybka, A.; Shlyakhov, I. N.; Kutnii, D.; Zakharchenko, A.A.

doi:10.1023/a:1020274401151

Cited by 8 publications

(3 citation statements)

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“…The gas-forming impurities were also removed with high efficiency by the EBM process. The outgassing of the vanadium samples was measured before, and after purification using an MX7203 mass spectrometer [9], within a temperature range from 25 • C to 800 • C. Four main components are released from the vanadium samples during the thermal desorption, H 2 O, CO, N 2 and CO 2 . The intensity of outgassing for the sample after refining is five times less than for the starting metal.…”

Section: A Chemical Purity Of the Vanadium Samplementioning

confidence: 99%

New investigation of half-lives for the decay modes of V50

et al. 2019

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A new search for the decay modes of the 4-fold forbidden non-unique decay of 50 V has been performed at the Gran Sasso Underground Laboratory (LNGS). In total an exposure of 197 kg×d has been accumulated. The half-life for the electron capture into the first excited state of 50 Ti has been measured with the highest precision to date as 2.67 +0.16 −0.18 x 10 17 yr (68% C.I.) in which systematics uncertainties dominate. The search for the β-decay into the first excited state of 50 Cr resulted in a lower limit of 1.9 x 10 19 yr (90% C.I.), which is an improvement of almost one order of magnitude compared to existing results. The sensitivity of the new measurement is now in the region of theoretical predictions.

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Section: A Chemical Purity Of the Vanadium Samplementioning

confidence: 99%

New investigation of half-lives for the decay modes of V50

et al. 2019

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“…Comprehensive, up-to-date information of band parameters for III-V zincblende compounds have been given by Vurgaftman et al [1]. Various electronic and optical properties of II-VI semiconductors [2] and their applications in optoelectronic devices [3,4], quantum wells [5], quantum wires [6], quantum dots [7], lasing devices, 980 nm pump lasers [8] and detectors for nuclear power plant [9] have been reported in the literature [2][3][4][5][6][7][8][9]. In spite of their potential applications, the Debye temperature and melting point of these semiconductors have still not been sufficiently studied.…”

Section: Introductionmentioning

confidence: 99%

Debye temperature and melting point of II‐VI and III‐V semiconductors

Kuḿar¹,

Jha

Shrivastava

2010

Cryst. Res. Technol.

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In this paper, simple relations are proposed for the calculation of Debye temperature θ D and melting point T m of II-VI and III-V zincblende semiconductors. Six relations are proposed to calculate the value of θ D . Out of these six relations, two are based on plasmon energy data and the others on molecular weight, melting point, ionicity and energy gap. Three simple relations are proposed to calculate the value of T m . They are based on plasmon energy, molecular weight and ionicity of the semiconductors. The average percentage deviation of all nine equations was calculated. In all cases, except one, it was estimated between 3.34 to 17.42 % for θ D and between 2.37 to 10.45 % for T m . However, in earlier correlations, it was reported between 10.59 to 33.38% for θ D and 6.96 to 14.95% for T m . The lower percentage deviation shows a significant improvement over the empirical relations proposed by earlier workers. The calculated values of θ D and T m from all equations are in good agreement with the available experimental values and the values reported by different workers.

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“…Li et al [3] have enunciated the melting temperature and cohesive energy of binary alloys. Various electronic and optical properties of II-VI compounds [4,5] and their applications in optoelectronic devices [6,7]; quantum wells [8], quantum wires [9], and quantum dots [10] lasing devices; 980 nm pump lasers [11]; detectors for nuclear power plant [12] etc. have been reported in the literature [4][5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Heats of formation of binary semiconductors

Kuḿar

Sastry

2005

Physica Status Solidi (b)

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PACS 71.45.Gm Heats of formation of tetrahedrally coordinated II-VI and III-V groups of binary semiconductors have been calculated using plasmon energy data. Two simple relations between plasmon energy and heats of formation have been proposed. One is based on spectroscopic model of Phillips and Van Vechten and other is based on the best-fit data of heats of formation. The calculated values of heats of formation from both the equations are compared with the experimental values and the values reported by earlier workers. A fairly good agreement has been obtained between them.

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Cited by 8 publications

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New investigation of half-lives for the decay modes of V50

New investigation of half-lives for the decay modes of V50

Debye temperature and melting point of II‐VI and III‐V semiconductors

Heats of formation of binary semiconductors

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