64Gb/s Electro Absorption Modulator Operation in InP-Based Active-Passive Generic Integration Platform

Trajkovic, M.; Blache, F.; Jorge, F.; Mekhazni, Karim; Provost, J.-G.; Debrégeas, H.; Haan, E. den; Augustin, LM Luc; Williams, Kevin; Leijtens, X.J.M.

doi:10.1109/ecoc.2018.8535339

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The operation speed and energy per bit of the driver is limited by the transit frequency available on the commercial process but is sufficient for a proof-of-concept for DC coupling to photonics. To demonstrate the feasibility of a simplified interconnection with the modulator, we have paired it with EAM devices with 32 GHz of bandwidth [38] which were manufactured in a generic InP photonic foundry [39]. The DC coupling scheme was demonstrated with wire bond chip-to-chip interconnection to verify the operation of the scheme, as shown in Figure 2a.…”

Section: B DC Coupling Proof-of-conceptmentioning

confidence: 99%

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Yao

Liu

Matters-Kammerer

et al. 2021

J. Lightwave Technol.

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Intimate integration of photonics with electronics is regarded as the key to further improvement in bandwidth, speed and energy efficiency of information transport systems. Here, a method based on wafer-scale polymer bonding is reviewed which is compatible with foundry-sourced high-performance InP photonics and BiCMOS electronics. We address challenges with respect to circuit architecture, co-simulation framework and interconnect technology and introduce our approach that can lead to broadband high-density interconnects between photonics and electronics. Recent proof-of-concept work utilizing DC-coupled driver connections to modulators, which significantly reduces the interconnect complexity, is summarized. Furthermore, cosimulation concepts based on equivalent circuit models are discussed with emphasis on the importance of impedance matching between driver and modulator. Finally, realizations of broadband interconnects and functional photonic building blocks after wafer bonding are highlighted to demonstrate the potential of this wafer-scale co-integration method.

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Section: B DC Coupling Proof-of-conceptmentioning

confidence: 99%

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Yao

Liu

Matters-Kammerer

et al. 2021

J. Lightwave Technol.

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“…Electro-absorption modulators (EAM) have been produced using advanced foundry platforms and are demonstrated with data rates of 64Gbit/s and beyond [17][18]. These are used in combination with the bespoke drivers.…”

Section: Die-to-die Assembly Of Co-designed Circuitsmentioning

confidence: 99%

Indium Phosphide Photonic Circuits on Silicon Electronics

Williams¹,

Liu²,

Matters-Kammerer³

et al. 2020

Optical Fiber Communication Conference (OFC) 2020

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“…The EAM cross section uses the available p-i-n InP active layer stack in the multi-project wafer run offered by SMART Photonics [12] through the JePPIX service [13], fabricated in an experimental run on a semi-insulating substrate. A compromise between its E/O bandwidth and extinction ratio (ER), presented in [10], gives the EAM length of 150 µm. Its static extinction ratio is 12 dB (Fig 1b), and the bandwidth 32 GHz (Fig.…”

Section: Eam Characteristicsmentioning

confidence: 99%

“…To the best of our knowledge this is the first time foundry enabled InP PIC and BiCMOS driver are assembled together. The characterisation of the InP electro-absorption modulator integrated with passive waveguides is described in [10], showing a 100 µm-long EAM operating at 64 Gb/s. A first attempt of chip-on-carrier (CoC) is presented in [11], maintaining its E/O bandwidth and improving the reflection parameter, while still driving the EAM with an external discrete driver.…”

Section: Introductionmentioning

confidence: 99%

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

Trajkovic¹,

Zhang²,

Blache

et al. 2019

45th European Conference on Optical Communication (ECOC 2019)

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64Gb/s Electro Absorption Modulator Operation in InP-Based Active-Passive Generic Integration Platform

Cited by 6 publications

References 9 publications

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Towards the Integration of InP Photonics With Silicon Electronics: Design and Technology Challenges

Indium Phosphide Photonic Circuits on Silicon Electronics

36 Gb/s operation of a BiCMOS driver and InP EAM using foundry platforms

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