650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches

Abstract

We present a SiC Trench JFET technology that achieves a record setting specific on-resistance (RDSA) of 0.75mohm.cm2. These SiC devices are combined with optimized low voltage MOSFETs to form co-packaged cascode transistors, which provide unprecedented performance benefits, with a clear path to direct cost parity with silicon superjunction devices. These devices are shown to be useful for all circuit topologies..

Status of SiC Products and Technology

“…The use of advanced wafer thinning to reduce substrate resistance together with the dense trench JFET cell technology for SiC [7] has resulted in the introduction of 650 V cascode devices from USCi that can complete very favorably with incumbent Si superjunction, GaN HEMT, and SiC MOS devices. Table 1 shows the RdsA of commercially available 650 V devices, with SiC Cascodes providing >10× RdsA improvement over silicon devices, with obvious benefits in cost and lower capacitances.…”

High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode

“…With the advancement of SiC power devices, manufacturers are developing a variety of SiC-based highperformance IPM such as the SIP half-bridge with driver developed in this work together with APEX Microtechnology [3]. UnitedSiC's Stack-Cascode switch technology is an ideal fit for these high-performance, compact IPMs, offering the lowest RDS×A of any switches across the 650V-1700V class, very fast switching and resultingly low losses [4].…”