We report the demonstration of monolithically integrated light-emitting diodes (LEDs) and power metal-oxide-semiconductor channel high-electron-mobility transistors (HEMTs) in GaN. The structure comprised a direct epitaxial integration of layers typical for a GaN-based LED grown directly on top of the layers of a GaN-based HEMT. The layers were then fabricated into a serially connected pair of GaN LED and metal-oxide-semiconductor-gated 0.3 lm-channel HEMT by exposing the LED/HEMT epitaxial layers in selective area etching. The resulting monolithically integrated circuit shows a full gate voltage modulation of the light output power. This demonstrates compatibility of group-III nitride LED and HEMT processes. V C 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4807125]GaN-based high-power light-emitting diodes (LEDs) used in lighting applications typically require dedicated electronic driver circuits for AC-DC power conversion, current sourcing, and dimming using pulse-width modulation (PWM) or analog current control methods. 1 GaN power switching field-effect transistors (FETs), such as metaloxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSCHEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, 2-4 and can be very useful as output devices for emerging applications of high power-high voltage LED systems. Ultimately, monolithic integration of GaN-based LEDs and GaN power HEMTs can reduce the cost and the size of solid state lighting systems, improve system reliability, and serve as a technology platform for the development of light-emitting power integrated circuits (LEPICs). LEPICs can also play an important role in adding functionalities required for emerging solid state lighting applications such as visible light communication (VLC) and other LED control technologies required for future smart lighting applications. 5

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A comparative study of the electrical and interface characteristics for on GaN MOS capacitors with as‐deposited and post‐annealed Al2O3 gate dielectric, deposited via atomic layer deposition (ALD), has been performed to gain insight into the effects of annealing on the MOS interface properties. Comparison is also made to an annealed 65nm PECVD SiO2 gate dielectric. We have performed C‐V and conductance spectroscopy measurements, demonstrating annealing provides a significant reduction in deep interface traps accompanied by a slight increase in shallow traps. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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