Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Takashima, S.; Li, Zhongda; Chow, T. Paul

doi:10.1109/ted.2013.2278185

Cited by 55 publications

(18 citation statements)

References 23 publications

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“…However, this is not enough to achieve fully E-mode operation, even for a nanowire width down to 15 nm. This result agrees well with previous works [16], [24] and illustrates the difficulty to achieve normally-off behavior relying solely on sidewall depletion.…”

Section: Resultssupporting

confidence: 93%

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Nela

Zhu

et al. 2019

IEEE Electron Device Lett.

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In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (VTH) over 0.6 V at 1 μA/mm, large current density (IDS) up to 590 mA/mm, low specific on resistance (RON,SP) of 1.33 mΩ•cm 2 , high ON/OFF ratio over 10 10 and large breakdown voltage (VBR) of 1080 V at 1 μA/mm with grounded substrate. The excellent high power FOM of 877 MW/cm 2 reveals the potential of our approach to obtain E-mode operation, while maintaining exceptional on-state performance and high VBR.

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Section: Resultssupporting

confidence: 93%

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Nela

Zhu

et al. 2019

IEEE Electron Device Lett.

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“…1(e)). The sidewall conduction was suggested by previous studies [25][26][27][28] but has not been investigated, in addition carrier accumulation at the oxide/GaN interface at trench bottom of the nanowires was neglected. To investigate this effect, periodically gate-recessed MOS transistors were fabricated ( Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Santoruvo

Tandon

et al. 2016

IEEE Trans. Electron Devices

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Abstract-Enhanced performance in AlGaN/GaN Schottky barrier diodes (SBDs) is investigated using a nanowire hybrid tri-anode structure that integrates three-dimensional Schottky junctions with tri-gate transistors. The fabricated SBDs presented an increased output current density with improved linearity, above 1 A/mm at 5 V when normalized by effective anode width, over 3 orders of magnitude lower reverse leakage current and superior heat dissipation. The sidewall Schottky contacts reduced the turn-on voltage and eliminated the non-ideality caused by the AlGaN barrier. The large surface area of tri-gate architecture greatly enhanced heat dissipation and largely reduced the average temperature as well as thermal resistance of the integrated tri-gate transistors. The trench conduction near SiO2/GaN interface, formed under forward bias at both sidewalls and bottom of nanowire trenches, compensated part of the self-heating degradation and improved the output linearity of the device. Optimal design for the tri-anode structure, based on a model of critical filling factor, was proposed to surmount the issue of partial removal of two-dimensional electron gas (2DEG), unveiling the potential of nanostructured GaN devices to achieve comparable or even larger output current than counterpart planar devices.

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“…Similar gate structures have also been investigated. Normally-off operation with high drain current 58) and suppression of the short channel effect 59) have been observed.…”

Section: Advanced Researchmentioning

confidence: 92%

Recent progress of GaN power devices for automotive applications

Kachi

2014

Jpn. J. Appl. Phys.

302

169

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Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed.

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Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Cited by 55 publications

References 23 publications

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

Enhanced Electrical Performance and Heat Dissipation in AlGaN/GaN Schottky Barrier Diodes Using Hybrid Tri-anode Structure

Recent progress of GaN power devices for automotive applications

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